Kaiwei Dai
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View article: High Breakdown Voltage Β-Ga2o3 Schottky Barrier Diode with Fluorine-Implanted Termination
High Breakdown Voltage Β-Ga2o3 Schottky Barrier Diode with Fluorine-Implanted Termination Open
View article: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET Open
A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P…