Explanipedia

Electric-field switching of interlayer magnetic order in a van der waals heterobilayer via spin-electric potential Open

Chengxi Huang, Jinzhe Han, Jing Wang, Ziyang Qu, Fang Wu , et al. · 2025

Electric-field control of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets, primarily due to …

Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions Open

Wenkai Zhu, Hui Wen, Shouguo Zhu, Qirui Cui, Shihong Xie , et al. · 2025

Anomalous magnetoresistance in an antiferromagnetic Kagome semimetal heterostructures Open

Xionghua Liu, Qiyuan Feng, Weibin Cui, Hanjie Guo, Yubin Hou , et al. · 2025

Antiferromagnetic Kagome semimetals have attracted tremendous attentions for their potential application in antiferromagnetic topological spintronics. Effectively manipulating Kagome antiferromagnetic states could reveal abundant physical …

Giant Uncompensated Magnon Spin Currents in X-type Magnets Open

Zi-An Wang, Bo Li, Shui-Sen Zhang, W. J. Lu, Mingliang Tian , et al. · 2025

Magnon spin currents in insulating magnets are useful for low-power spintronics. However, in magnets stacked by antiferromagnetic (AFM) exchange coupling, which have recently aroused significant interest for potential applications in spint…

Electric field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures Open

Pengfei Liu, Tao Xu, Qi Liu, Juncai Dong, Ting Lin , et al. · 2024

Low‐Defect‐Density Monolayer MoS2 Wafer by Oxygen‐Assisted Growth‐Repair Strategy Open

Xiaomin Zhang, Jiahan Xu, Aomiao Zhi, Jian Wang, Yue Wang , et al. · 2024

Atomic chalcogen vacancy is the most commonly observed defect category in two dimensional (2D) transition‐metal dichalcogenides, which can be detrimental to the intrinsic properties and device performance. Here a low‐defect density, high‐u…

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures Open

Pengfei Liu, Tao Xu, Qi Liu, Juncai Dong, Ting Lin , et al. · 2024

Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a ferrimagn…

Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions Open

Shouguo Zhu, Hailong Lin, Wenkai Zhu, Weihao Li, Jing Zhang , et al. · 2024

The magnetic tunnel junctions (MTJs) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport, lead…

Orbital Hall effect assisted field-free perpendicular magnetization switching Open

Zelalem Abebe Bekele, Yuanyuan Jiang, Kun Lei, Xiukai Lan, Xiangyu Liu , et al. · 2024

Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs requ…

Analytical photoresponses of gated nanowire photoconductors Open

Yinchu Shen, Jiajing He, Xu Yang, Kaiyou Wang, Yaping Dan · 2024

Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the ph…

InGaN‐Based Whispering Gallery Mode Laser with Lateral Nanoporous Distributed Bragg Reflector Exhibits Superior Mode Selectivity Open

Lixia Zhao, Jiawei Chen, Shan Lin, Yuqing Huang, Xiaotian Ge , et al. · 2024

Whispering gallery mode (WGM) laser with single‐mode is important for optoelectronic applications because of the higher stability during the light signal transmission. But till now, for InGaN‐based WGM laser, most reports of lasing behavio…

Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions Open

Shouguo Zhu, Hailong Lin, Wenkai Zhu, Weihao Li, Jing Zhang , et al. · 2024

The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport, leadi…

Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions Open

Wenkai Zhu, Yingmei Zhu, Tong Zhou, Xianpeng Zhang, Hailong Lin , et al. · 2023

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques Open

Weihao Li, Wenkai Zhu, Gaojie Zhang, Hao Wu, Shouguo Zhu , et al. · 2023

Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2…

Electrically function-switchable magnetic domain-wall memory Open

Yu Sheng, Weiyang Wang, Yongcheng Deng, Yang Ji, Houzhi Zheng , et al. · 2023

Versatile memory is strongly desired for end users, to protect their information in the information era. In particular, bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent…

Topological Spin Textures in a Non‐Collinear Antiferromagnet System Open

Xionghua Liu, Qiyuan Feng, Dong Zhang, Yongcheng Deng, Shuai Dong , et al. · 2023

Topologically protected magnetic “whirls” such as skyrmions in antiferromagnetic materials have recently attracted extensive interest due to their nontrivial band topology and potential application in antiferromagnetic spintronics. However…

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions Open

Wenkai Zhu, Yingmei Zhu, Tong Zhou, Xianpeng Zhang, Hailong Lin , et al. · 2023

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thi…

Low-Threshold Ingan-Based Whispering Gallery Mode Laser with Lateral Nanoporous Distributed Bragg Reflector Open

Lixia Zhao, Jiawei Chen, Chang Liu, Shan Lin, Xiaotian Ge , et al. · 2023

All-electrical switching of a topological non-collinear antiferromagnet at room temperature Open

Yongcheng Deng, Xionghua Liu, Yiyuan Chen, Zongzheng Du, Nai Jiang , et al. · 2022

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interes…

Electrically function switchable magnetic domain-wall memory Open

Sheng Yu, Weiyang Wang, Yongcheng Deng, Ji Yang, Houzhi Zheng , et al. · 2022

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data …

Selectively controlled ferromagnets by electric fields in van der Waals ferromagnetic heterojunctions Open

Zi-Ao Wang, Weishan Xue, Faguang Yan, Wenkai Zhu, Yi Liu , et al. · 2022

Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the…

All-electrical switching of a topological non-collinear antiferromagnet at room temperature Open

Yongcheng Deng, Xionghua Liu, Yiyuan Chen, Zongzheng Du, Nai Jiang , et al. · 2022

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest…

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances (Small 14/2022) Open

Lixia Zhao, Chang Liu, Kaiyou Wang · 2022

III-Nitride Optoelectronic Devices In article number 2106757, Lixia Zhao and co-workers review the recent progress of III-nitride (III-N) optoelectronic devices, such as light emitting diodes, photodetectors, solar cells and light photocat…

Polarization‐sensitive and wide‐spectrum photovoltaic detector based on quasi‐1D ZrGeTe4 nanoribbon Open

Ruixue Bai, Tao Xiong, Jinshu Zhou, Yue‐Yang Liu, Wanfu Shen , et al. · 2021

Low‐dimensional semiconductors with in‐plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near‐infrared (NIR) region. However, the narrow bandgap can cause noise owing to the high dark current i…

Gradient Descent on Multilevel Spin–Orbit Synapses with Tunable Variations Open

Xiukai Lan, Yi Cao, Xiangyu Liu, Kaijia Xu, Chuan Liu , et al. · 2021

Neuromorphic computing using multilevel nonvolatile memories as synapses offers opportunities for future energy‐ and area‐efficient artificial intelligence. Among these memories, artificial synapses based on current‐induced magnetization s…

Progress and Perspectives of Photodetectors Based on 2D Materials Open

Wenkai Zhu, Faguang Yan, Quanshan Lv, Ce Hu, Kaiyou Wang · 2021

Photodetectors based on two-dimensional (2D) materials and their heterostructures have been attracting immense research interests due to their excellent device performances, such as ultrahigh photoresponsivity, ultrafast and broadband phot…

Prospect of Spin-Orbitronic Devices and Their Applications Open

Yi Cao, Guozhong Xing, Huai Lin, Nan Zhang, Houzhi Zheng , et al. · 2020

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode Open

Shulun Li, Yao Chen, Xiangjun Shang, Ying Yu, Jiawei Yang , et al. · 2020

Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory Open

Gang Cao, Xiaobing Yan, Jingjuan Wang, Zhenyu Zhou, Jianzhong Lou , et al. · 2020

Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance. The…

Gate-controlled spin relaxation in bulk WSe2 flakes Open

Ying Li, Xia Wei, Jialiang Ye, Guihao Zhai, Kaiyou Wang , et al. · 2020

We have studied the spin relaxation dynamics in both n- and p-type layered bulk WSe2 under a perpendicular electric field by employing time-resolved Kerr rotation and helicity-resolved transient reflection measurements. The experimental re…

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