Karine Hestroffer
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View article: High-Quality GaP(111) Grown by Gas-Source MBE for Photonic Crystals and Advanced Nonlinear Optical Applications
High-Quality GaP(111) Grown by Gas-Source MBE for Photonic Crystals and Advanced Nonlinear Optical Applications Open
The precise fabrication of semiconductor-based photonic crystals with tailored optical properties is critical for advancing photonic devices. GaP(111) is a material of particular interest due to its high refractive index, wide optical band…
View article: Triply-resonant sum frequency conversion with gallium phosphide ring resonators
Triply-resonant sum frequency conversion with gallium phosphide ring resonators Open
We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-µm-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8 ± 1.1%/mW; is measured f…
View article: Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer Open
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fab…
View article: Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators
Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators Open
We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conv…
View article: Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators
Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators Open
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship betwee…
View article: Target-wavelength-trimmed second harmonic generation with gallium\n phosphide-on-nitride ring resonators
Target-wavelength-trimmed second harmonic generation with gallium\n phosphide-on-nitride ring resonators Open
We demonstrate post-fabrication target-wavelength trimming with a gallium\nphosphide on silicon nitride integrated photonic platform using controlled\nelectron-beam exposure of hydrogen silsesquioxane cladding. A linear\nrelationship betwe…
View article: Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators
Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators Open
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between …
View article: Supplementary document for Inverse-designed photon extractors for optically addressable defect qubits - 4897858.pdf
Supplementary document for Inverse-designed photon extractors for optically addressable defect qubits - 4897858.pdf Open
Supplement 1
View article: 400%/W second harmonic conversion efficiency in 14 μm-diameter gallium phosphide-on-oxide resonators
400%/W second harmonic conversion efficiency in 14 μm-diameter gallium phosphide-on-oxide resonators Open
Second harmonic conversion from 1550 nm to 775 nm with an efficiency of 400% W-1 is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators wi…
View article: Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits
Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits Open
Generating entangled graph states of qubits requires high entanglement rates with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced …
View article: Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits
Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits Open
Generating\nentangled graph states of qubits requires high entanglement\nrates with efficient detection of multiple indistinguishable photons\nfrom separate qubits. Integrating defect-based qubits into photonic\ndevices results in an enhan…
View article: Polarity in GaN and ZnO: Theory, measurement, growth, and devices
Polarity in GaN and ZnO: Theory, measurement, growth, and devices Open
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also imp…
View article: Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)
Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) Open
InGaN alloys have been attracting tremendous interest because of the large range of wavelengths covered when tuning the In to Ga ratio, offering extensive band gap engineering possibilities as well as the opportunity to achieve longer wave…