Karsten Rode
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View article: Effects of disorder on the magnetic properties of the Heusler alloy V2FeAl
Effects of disorder on the magnetic properties of the Heusler alloy V2FeAl Open
Magnetic properties of multicomponent alloys depend sensitively on the degree of atomic order on the different crystallographic sites. Here we report the contrast between the magnetic properties of bulk and thin-film samples of the Heusler…
View article: Magnetism of noncolinear amorphous DyCo3 and TbCo3 thin films
Magnetism of noncolinear amorphous DyCo3 and TbCo3 thin films Open
The magnetization of amorphous DyCo3 and TbCo3 is studied by magnetometry, anomalous Hall effect and magneto-optic Kerr effect to understand the temperature-dependent magnetic structure. A square magnetic hysteresis loop with perpendicular…
View article: Effects of disorder on the magnetic properties of the Heusler alloy V$_{2}$FeAl
Effects of disorder on the magnetic properties of the Heusler alloy V$_{2}$FeAl Open
Magnetic properties of multicomponent alloys depend sensitively on the degree of atomic order on the different crystallographic sites. In this work we demonstrate the magnetic contrast between bulk and thin-film samples of the Heusler allo…
View article: Quasi-static magnetization dynamics in a compensated ferrimagnetic half-metal -- Mn$_2$Ru$_x$Ga
Quasi-static magnetization dynamics in a compensated ferrimagnetic half-metal -- Mn$_2$Ru$_x$Ga Open
Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtai…
View article: Single-pulse all-optical partial switching in amorphous DyxCo1−x and TbxCo1−x with random anisotropy
Single-pulse all-optical partial switching in amorphous DyxCo1−x and TbxCo1−x with random anisotropy Open
Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gdx(FeCo)1−x in response to single fast laser pulses is well established. Here, we report unusual toggle switching in thin films of sperimagnetic amor…
View article: Stability of Mn2Ru Ga-based multilayer stacks
Stability of Mn2Ru Ga-based multilayer stacks Open
Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magne…
View article: Single-pulse all-optical switching in amorphous Dy$_x$Co$_{1-x}\text{ }$ and Tb$_x$Co$_{1-x}$
Single-pulse all-optical switching in amorphous Dy$_x$Co$_{1-x}\text{ }$ and Tb$_x$Co$_{1-x}$ Open
Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagn…
View article: Stability of Mn2RuxGa-based Multilayer Stacks
Stability of Mn2RuxGa-based Multilayer Stacks Open
Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magne…
View article: Ultrafast Double Pulse All-Optical Reswitching of a Ferrimagnet
Ultrafast Double Pulse All-Optical Reswitching of a Ferrimagnet Open
All-optical reswitching has been investigated in the half-metallic Heusler ferrimagnet Mn_{2}Ru_{0.9}Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs, 800 nm laser pulse that follows …
View article: Magnetic reversal and pinning in a perpendicular zero-moment half-metal
Magnetic reversal and pinning in a perpendicular zero-moment half-metal Open
Compensated ferrimagnets are promising materials for fast spintronic\napplications based on domain wall motion as they combine the favourable\nproperties of ferromagnets and antiferromagnets. They inherit from\nantiferromagnets immunity to…
View article: Fermi level engineering in Mn$_2$Ru$_x$Ga thin films by the variation of Mn and Ru content
Fermi level engineering in Mn$_2$Ru$_x$Ga thin films by the variation of Mn and Ru content Open
Variation of Mn content in Mn$_2$Ru$_x$Ga thin films influences chemical disorder and crystal structure, which strongly influence material properties. Mn$_y$Ru$_x$Ga thin films with $1.2 < y < 2.6$ for $x$ = 0.5, 0.7 and 0.9 were deposited…
View article: Magnetization dynamics in synthetic antiferromagnets: Role of dynamical energy and mutual spin pumping
Magnetization dynamics in synthetic antiferromagnets: Role of dynamical energy and mutual spin pumping Open
We investigate magnetization dynamics in asymmetric interlayer exchange\ncoupled Py/Ru/Py trilayers using both vector network analyzer-based and\nelectrically detected ferromagnetic resonance techniques. Two different\nferromagnetic resona…
View article: Magnetization dynamics and mutual spin-pumping in SAFs
Magnetization dynamics and mutual spin-pumping in SAFs Open
Primary data related to the publication in PRB: Article Link. Pre-release version is available at: Arxiv, ResearchGate. Some of the file are auxiliary or analisys files for faster display of the main results (like .opj, .ods files). Main r…
View article: Study of the Effect of Annealing on the Properties of Mn2RuxGa Thin Films
Study of the Effect of Annealing on the Properties of Mn2RuxGa Thin Films Open
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnet…
View article: Giant spin-orbit torque in a single ferrimagnetic metal layer
Giant spin-orbit torque in a single ferrimagnetic metal layer Open
Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to ferrom…
View article: Antiferromagnetic single-layer spin-orbit torque oscillators
Antiferromagnetic single-layer spin-orbit torque oscillators Open
We show how a charge current through a single antiferromagnetic layer can excite and control self-oscillations. Sustained oscillations with tunable amplitudes and frequencies are possible in a variety of geometries using certain classes of…
View article: Magneto-optic Kerr effect in a spin-polarized zero-moment ferrimagnet
Magneto-optic Kerr effect in a spin-polarized zero-moment ferrimagnet Open
The magneto-optical Kerr effect (MOKE) is often assumed to be proportional to\nthe magnetisation of a magnetically ordered metallic sample; in metallic\nferrimagnets with chemically distinct sublattices, such as rare-earth\ntransition-meta…
View article: Magnetization and anisotropy of cobalt ferrite thin films
Magnetization and anisotropy of cobalt ferrite thin films Open
The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455kAm−1, which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6μB that is a…
View article: Narrow-band tunable terahertz emission from ferrimagnetic Mn3-xGa thin films
Narrow-band tunable terahertz emission from ferrimagnetic Mn3-xGa thin films Open
Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn3-xGa Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than …
View article: Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn2Ru<i>x</i>Ga
Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn2Ru<i>x</i>Ga Open
Tunnel magnetoresistance ratios of up to 40% are measured between 10 K and 300 K when the highly spin-polarized compensated ferrimagnet, Mn2RuxGa, is integrated into MgO-based perpendicular magnetic tunnel junctions. Temperature and bias d…
View article: Designing a fully compensated half-metallic ferrimagnet
Designing a fully compensated half-metallic ferrimagnet Open
Recent experimental work on Mn2RuxGa demonstrates its potential as a\ncompensated ferrimagnetic half-metal (CFHM).Here we present a set of\nhigh-throughput ab initio density functional theory calculations and detailed\nexperimental charact…
View article: The zero-moment half metal: How could it change spin electronics?
The zero-moment half metal: How could it change spin electronics? Open
The Heusler compound Mn2RuxGa (MRG) may well be the first compensated half metal. Here, the structural, magnetic and transport properties of thin films of MRG are discussed. There is evidence of half-metallicity up to x = 0.7, and compensa…
View article: Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes
Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes Open
We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and d…
View article: Spin-orbit torque switching without external field with a ferromagnetic\n exchange-biased coupling layer
Spin-orbit torque switching without external field with a ferromagnetic\n exchange-biased coupling layer Open
Magnetization reversal of a perpendicular ferromagnetic free layer by\nspin-orbit torque (SOT) is an attractive alternative to spin-transfer torque\n(STT) switching in magnetic random-access memory (MRAM) where the write process\ninvolves …
View article: Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer
Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer Open
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves pas…