Kasey Hogan
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View article: Development of 100 mm AlN Single‐Crystal Growth and Subsequent Substrate Preparation
Development of 100 mm AlN Single‐Crystal Growth and Subsequent Substrate Preparation Open
Aluminum nitride (AlN) is an ultrawide bandgap (UWBG) semiconductor with a proven record on meeting the needs for the ultraviolet (UV) devices operating in the range of 210–280 nm. 2‐inch AlN substrates are commercially available. These su…
View article: MOCVD Growth and Characterization of Be-Doped GaN
MOCVD Growth and Characterization of Be-Doped GaN Open
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor leve…
View article: Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors Open
We review the recent progress to achieve air stable III-nitride photocathodes for applications as photon detectors. High conductivity p-type films are critically important to realize high quantum efficiency (QE) photocathodes with effectiv…
View article: Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor
Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor Open
The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe w…
View article: Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN:Mg layer
Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN:Mg layer Open
In the current study, the electrical behavior of the AlGaN/GaN high electron mobility transistors (HEMTs) grown with an underlying GaN:Mg layer is detailed. It is shown that the activation of the buried p-GaN layer is achieved without hydr…
View article: p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing Open
We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is imp…
View article: <i>In operando</i> investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application
<i>In operando</i> investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application Open
Here, we report on the application of an electron source with high accelerating voltage (62 kV–200 kV) to simulate betavoltaic power generation capabilities of a planar GaN PIN (p-GaN/i-GaN/n-GaN) device. The in situ electrical characteriz…
View article: Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD Open
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template…
View article: Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate
Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate Open
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode. In this configuration, p-GaN body-diode-based …