K. R. Evans
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Crossbite correction: learning through simulation. Open
Correction of anterior or posterior crossbite may be undertaken by removable appliances in the mixed dentition. The Dental Council of Ireland requires a graduating dentist to be able to design, insert and adjust active removable appliances…
View article: ILRS analysis activities after the adoption of ITRF202
ILRS analysis activities after the adoption of ITRF202 Open
The contribution of the International Laser Ranging Service (ILRS) to the most recent realization of the International Terrestrial Reference System (ITRS) was the result of an analysis strategy with two major modifications compared to the …
Implementation of ITRF2020 in the ILRS Operational Products Open
The ILRS contributed to the development of ITRF2020 via the combined products submitted to ITRS. The combined products were the result of the combination of individual AC contributions where a new approach in handling systematic errors at …
Incorporating LARES-2 SLR Data in ILRS Products for ITRF Development Open
Geodetic network infrastructure has evolved with increasing pace the past decade with remarkable additions of modern hardware, replacing aging, ‘80s vintage equipment throughout the globe. SLR needs however more than updating the network t…
View article: The Registry of Senior Australians: Informing Aged Care Policy Reforms.
The Registry of Senior Australians: Informing Aged Care Policy Reforms. Open
ObjectivesTo: (1) outline the research produced using linked data from the Registry of Senior Australians (ROSA) which informed the recommendations from Australia’s Royal Commission into Aged Care Quality and Safety (delivered February 202…
Spanish Abstracts for Volume 32, Issue 8, 2020 Open
Objetivos: Este estudio utiliz ó el m é todo de revisi ó n de historias clínicas para determinar las características de los eventos adversos que se dieron en las unidades de hospitalizaci ó n de los hospitales de Corea, así como las difere…
The ILRS Analysis Centers’ Report on the Evaluation of ITRF2020P Open
The member ACs of the ILRS Analysis Standing CommitteeASC, evaluated the preliminary release of ITRF2020ITRF2020P. For the most part, this evaluation is based on the reanalysis of part or all of the SLR data from geodetic spherical targets…
The ILRS Contribution to ITRF2020 Open
The International Laser Ranging Service (ILRS) contribution to ITRF2020 has been prepared after the re-analysis of the data from 1993 to 2020, based on an improved modeling of the data and a novel approach that ensures the results are free…
Optical and structural properties of Si doped $β$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy Open
We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitud…
Optical and structural properties of Si doped $\beta$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy Open
We report the optical, electrical, and structural properties of Si doped $\beta$-Ga$_2$O$_3$ films grown on (010)-oriented $\beta$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of …
View article: Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films Open
Halide vapor phase epitaxy was used to grow homoepitaxial films of β-Ga2O3 on bulk (010) crystals and heteroepitaxial films of α-Ga2O3 on c-plane sapphire substrates. The β-Ga2O3 substrates were prepared prior to growth to remove sub-surfa…
View article: Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018
Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018 Open
Moore’s Law — realized via a combination of device physics advances, technology investments, and economic returns— allowed the number of transistors on a chip to double roughly every two years for over five decades. During those five decad…
View article: Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges Open
Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figu…
Accounting for Uncontrolled Variations in Low-Speed Turbine Experiments Open
It is common to assume that the performance of low-speed turbines depend only on the flow coefficient and Reynolds number. As such the required operating point is achieved by controlling the values of these two non-dimensional quantities b…