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View article: Progress and perspectives on polycrystalline germanium thin films: Advances in solid-phase crystallization
Progress and perspectives on polycrystalline germanium thin films: Advances in solid-phase crystallization Open
Polycrystalline germanium (Ge) thin films have reemerged as promising materials for next-generation electronic and optoelectronic devices because of their superior electrical and optical properties. However, challenges such as high defect …
View article: High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn (Adv. Electron. Mater. 8/2025)
High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn (Adv. Electron. Mater. 8/2025) Open
View article: A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors
A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors Open
Artificial thalamic neurons offer significant potential for medical treatment and neuromorphic computing applications. Their implementation with CMOS technology typically requires a large number of transistors and capacitors, leading to in…
View article: High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn
High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn Open
GeSn has gained significant interest as a material for next‐generation electronic devices, including thin‐film transistors (TFTs) because of its excellent electronic properties. In this study, high‐quality polycrystalline GeSn thin films a…
View article: Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization
Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization Open
We fabricated an inversion mode n-channel thin-film-transistor (TFT) on polycrystalline (poly-) Ge at low temperatures for monolithic three-dimensional large-scale IC (3D-LSI) and flexible electronics applications. Based on our previously …
View article: Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge Open
Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge. This study first demonstrates the rectifying behavior …
View article: High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization Open
View article: Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass Open
Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, we studied the relationship between the el…
View article: High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer Open
Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a large-grained Ge layer on …
View article: Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility Open
Low-temperature synthesis of polycrystalline (poly-) Ge on insulators is a key technology to integrate Ge-CMOS into existing devices. However, Fermi level control in poly-Ge has been difficult because poly-Ge has remained naturally highly …
View article: Improving carrier mobility of polycrystalline Ge by Sn doping
Improving carrier mobility of polycrystalline Ge by Sn doping Open
View article: High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization Open
View article: Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation
Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation Open
Low temperature (<200 oC) crystallization of GeSn (substitutional Sn concentration: >8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn fil…