Explanipedia

Variation of the relative permittivity of charged dielectrics Open

C. K. Ong, Zhigang Song, K. H. Oh, Hao Gong, C. Le Gressus · 1998

The variation of the relative permittivity of charged dielectrics with trapped charge density has been investigated by a time-resolved current method, in conjunction with a mirror image method employing a scanning electron microscope. The …

Molecular Dynamics Simulation of Electron Trapping in the Sapphire Lattice Open

C. Rambaut, K. H. Oh, H. Jaffrézic, Jorge Kohanoff, S. Fayeulle · 1995

Materials science Physics Biology

Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge model~\cite{blaise,blaise1}. Dyna…

A Monte Carlo model for trapped charge distribution in electron-irradiated α-quartz Open

K. H. Oh, C. K. Ong, B.T.G. Tan, G. Le Gressus · 1993

Materials science Physics Biology

The space dependence of charge carriers trapped in α-quartz under electron-beam bombardment is investigated using a Monte Carlo algorithm. The average energy of the electron after being detrapped from a trap site is first calculated by con…

Variation of trapping/detrapping properties as a function of the insulator size Open

K. H. Oh, C. K. Ong, B.T.G. Tan, C. Le Gressus, G. Blaise · 1993

Materials science Chemistry Physics

Using the scanning electron microscope we have investigated the physical parameters determining the size effect of various dielectric samples submitted to a surface electric field. It is shown that the size effect is a function of the stat…

Charge trapping on different cuts of a single-crystalline α-SiO2 Open

Hao Gong, C. Le Gressus, K. H. Oh, Xiaoyun Ding, C. K. Ong , et al. · 1993

Materials science Chemistry Physics

A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of …

Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique Open

K. H. Oh, C. Le Gressus, Hao Gong, C. K. Ong, B.T.G. Tan , et al. · 1993

Materials science Chemistry Physics

A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (tt) of the order of a few seconds appea…

A thermal control unit for microwave measurements of conductivity of a semiconducting material Open

K. H. Oh, C. K. Ong, B.T.G. Tan · 1989

Materials science Chemistry Physics

10.1088/0022-3735/22/10/014

A simple microwave method of moisture content determination in soil samples Open

K. H. Oh, C. K. Ong, B.T.G. Tan · 1988

Environmental science Mathematics Chemistry

10.1088/0022-3735/21/10/005

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