Kian Hua Tan
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View article: Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate
Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate Open
We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb 1− x Bi x ) material. Utilizing the molecular beam epitaxy method, we achieved high Bi com…
View article: Growth of droplet-free InSbBi on GaAs substrate
Growth of droplet-free InSbBi on GaAs substrate Open
Indium antimonide bismide (InSbBi) has emerged as a highly promising material for long-wavelength infrared photodetection devices due to its unique small energy bandgap (<0.17 eV) compared to existing III–V compound semiconductors. Desp…
View article: Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser
Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser Open
Single-mode tunable quantum cascade lasers (QCLs) are promising for high-resolution and highly sensitive trace gases sensing across the mid-infrared (MIR) region. We report on the development of a tunable single-mode slot waveguide QCL arr…
View article: Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy
Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy Open
We investigated the effect of VSb/IIIIn flux ratio and growth temperature on the Bi content of InSbBi material grown on an InSb substrate using molecular beam epitaxy. The Rutherford backscattering spectrum from a bulk InSb0.977Bi0.023 epi…
View article: Beam combining of a broadly and continuously tunable quantum cascade laser
Beam combining of a broadly and continuously tunable quantum cascade laser Open
We report a cost-efficient method to demonstrate the beam combining of five laser elements in an array of tunable slot waveguide quantum cascade lasers in the mid-infrared region at around 10 µm. An aspherical lens with five fine-tuned min…
View article: Widely tunable single-mode slot waveguide quantum cascade laser array
Widely tunable single-mode slot waveguide quantum cascade laser array Open
We report designs and experimental demonstrations of a widely tunable single-mode quantum cascade laser array based on slot waveguide structures in the mid-infrared region. The laser array device realized a continuous tuning range of 71 cm…
View article: Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers Open
We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial…
View article: Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers
Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers Open
Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. Ga…
View article: Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region
Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region Open
In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the Ga…
View article: Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics
Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics Open
The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an…
View article: Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) Open
Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integ…
View article: Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells
Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells Open
A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE + MBE method is presented. This structure is used as a test bench to assess the effects caused by the integration of subcells and tunnel junctions into the full 4J st…
View article: Component Integration Effects in 4-Junction Solar Cells with Dilute Nitride 1eV Subcell
Component Integration Effects in 4-Junction Solar Cells with Dilute Nitride 1eV Subcell Open
A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell i…
View article: Monolithic integration of InGaAs n-FETs and lasers on Ge substrate
Monolithic integration of InGaAs n-FETs and lasers on Ge substrate Open
We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed opto-e…
View article: Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells
Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells Open
Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown sa…
View article: Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange
Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange Open
The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical p…
View article: Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications
Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications Open
Recent advances on the development of a 4J latticematched dilute nitride solar cell for terrestrial and space applications are described. Modeling of the solar cell is carried out using a drift-diffusion model and material parameters extra…
View article: Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates
Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates Open
Technology Computer Aided Design modeling is used to examine the performance under light concentration of a 4-J solar cell Ge-based that includes a 1-eV MBE-grown dilute nitride subcell. The 1-eV solar cell is modeled and examined by using…
View article: Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy
Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy Open
Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epi…