Killian Veyret
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View article: Experimental evidence of a ReRAM mechanism relying on <i>operando</i> nanometric depleted zone in V2O3 thin films
Experimental evidence of a ReRAM mechanism relying on <i>operando</i> nanometric depleted zone in V2O3 thin films Open
Emerging Non-Volatile Memories are foreseen to be ideal candidates for new non-Von Neuman computing paradigms and yield performances superior to the eFlash memories, which will contest eFlash supremacy for embedded memories and automotive …