Kyoungah Cho
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View article: Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field‐Effect Transistors with Polycrystalline Silicon Channels
Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field‐Effect Transistors with Polycrystalline Silicon Channels Open
Physically unclonable functions (PUFs) have emerged as candidates for compact hardware security. In this study, PUFs of reconfigurable feedback field‐effect transistors (R‐FBFETs) with polycrystalline silicon channels are designed for dual…
View article: Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors
Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors Open
In this study, we investigate the impact of rising time on alternating current (AC) stress-induced degradation in amorphous indium–tin–gallium–zinc oxide (a-ITGZO) TFTs through both experiments and simulations. When AC bias stresses with r…
View article: Stateful Full Adder Using Silicon Diodes
Stateful Full Adder Using Silicon Diodes Open
Stateful logic can perform logic operations and simultaneously stores computational results in memory devices. Most stateful logic bases and algorithms have been studied using resistive random‐access memory devices. Herein, stateful full a…
View article: Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings
Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings Open
View article: Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing
Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing Open
This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec −1 ) and a high on/off r…
View article: Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation
Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation Open
Capacitorless two‐transistor (2T0C) dynamic random‐access memory (DRAM) cells comprising oxide thin‐film transistors (TFTs) show potential as low‐power and high‐density DRAM cells; however, the multiply–accumulate (MAC) operation using the…
View article: Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels
Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels Open
In this study, we investigate the gate-bias stability of triple-gated feedback field-effect transistors (FBFETs) with Si nanosheet channels. The subthreshold swing (SS) of FBFETs increases from 0.3 mV dec −1 to 60 and 80 mV dec −1 in p - a…
View article: Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors Open
In this study, we demonstrate the generation and storage of random voltage values using a ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative approach utilizes the logic-in-memory function of FBFETs to…
View article: Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure Open
View article: Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics Open
In this study, a triple‐gated transistor with a p + ‐i‐n + silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS t…
View article: Binarized neural network of diode array with high concordance to vector–matrix multiplication
Binarized neural network of diode array with high concordance to vector–matrix multiplication Open
View article: Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors Open
In this study, we examine the electrical characteristics of triple-gate feedback field-effect transistors (TG FBFETs) over a temperature range of −200 °C to 280 °C. With increasing temperature from 25 °C to 280 °C, the thermally generated …
View article: Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing
Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing Open
In‐memory computing significantly reduces workload and energy cost of data access in the traditional von Neumann computing architecture. Using various memristors, stateful logic is developed to realize in‐memory computing. However, memrist…
View article: Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States Open
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and …
View article: Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors
Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors Open
A reconfigurable logic‐in‐memory (R‐LIM) cell performs logic‐in‐memory functions as well as reconfigurable logic gates. The R‐LIM cell is constructed with triple‐gated (TG) feedback field‐effect transistors (FBFETs) that are reconfigured i…
View article: Effect of dual gating on electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide TFTs
Effect of dual gating on electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide TFTs Open
In this study, the effect of dual gating on the electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide (a‐ITGZO) thin‐film transistors (TFTs) is investigated. The composition (In:Sn:Ga:Zn = 1.4:0.2:2.0:1.0 at.) of the a‐ITGZ…
View article: Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure
Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure Open
The reconfigurable feedback field‐effect transistors (R‐FBFETs) with a double‐gated structure are designed and the logic and memory operations of a logic‐in‐memory (LIM) inverter comprising two R‐FBFETs are investigated. The R‐FBFETs exhib…
View article: Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors Open
Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scal…
View article: Anti‑tumor properties of FoxO1 in YD‑9 oral squamous cell carcinoma cells
Anti‑tumor properties of FoxO1 in YD‑9 oral squamous cell carcinoma cells Open
Oral squamous cell carcinoma (OSCC) is a tumor with a poor prognosis and a high recurrence rate. Despite its high annual incidence worldwide, appropriate therapeutic strategies have not yet been developed. Consequently, the 5‑year survival…
View article: Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors Open
In this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double‐gated feedback field‐effect transistors. The component transistors reconfigure their operation modes into n‐ or p‐chann…
View article: Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors
Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors Open
In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface t…
View article: Universal logic-in-memory cell enabling all basic Boolean algebra logic
Universal logic-in-memory cell enabling all basic Boolean algebra logic Open
View article: Performance Enhancement of Hybrid Energy Devices Using Cooling Patches
Performance Enhancement of Hybrid Energy Devices Using Cooling Patches Open
In this study, we demonstrated the enhancement of the output power of a hybrid energy device (HED) using a cooling patch that does not consume any external electric power. The HED consisted of a photovoltaic cell (PVC) and a thermoelectric…
View article: New ternary inverter with memory function using silicon feedback field-effect transistors
New ternary inverter with memory function using silicon feedback field-effect transistors Open
In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a positive feedback loop by carrier …
View article: Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors
Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors Open
In this study, we propose an inverter consisting of reconfigurable double-gated (DG) feedback field-effect transistors (FBFETs) and examine its logic and memory operations through a mixed-mode technology computer-aided design simulation. T…
View article: Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping
Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping Open
In this study, we perform reconfigurable n- and p-channel operations of a tri-top-gate field-effect transistor (FET) made of a p + -i-n + silicon nanowire (SiNW). In the reconfigurable FET (RFET), two polarity gates and one control gate in…
View article: Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor Open
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hyb…
View article: NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors Open
The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlene…
View article: Logic-in-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
Logic-in-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor Open
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). Further…
View article: Temperature-Dependent Electrical Characteristics of <i>p</i>-Channel Mode Feedback Field-Effect Transistors
Temperature-Dependent Electrical Characteristics of <i>p</i>-Channel Mode Feedback Field-Effect Transistors Open
In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec…