L. Subačius
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View article: Terahertz bow-tie diode based on asymmetrically shaped AlGaN/GaN heterostructures
Terahertz bow-tie diode based on asymmetrically shaped AlGaN/GaN heterostructures Open
Asymmetrical shaping of AlGaN/GaN heterostructures containing a conductive layer of two-dimensional electron gas (2DEG) was used for the development of bow-tie (BT) diodes for room temperature terahertz (THz) detection. Considering operati…
View article: Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers
Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers Open
Electro-optical modulation of a terahertz beam by drifting space-charge domains in n-GaN epilayers under pulsed electric field excitation was found and investigated at a temperature of 77 K. The free charge carrier contribution was observe…
View article: High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate
High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate Open
The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum…
View article: Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice
Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice Open
Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum superlattices allow to investigate high-frequency phenomena induced by the Bragg reflect…
View article: Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs\n Superlattice
Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs\n Superlattice Open
Parametric generation of oscillations and waves is a paradigm, which is known\nto be realized in various physical systems. Unique properties of quantum\nsuperlattices allow to investigate high-frequency phenomena induced by the\nBragg refl…
View article: Carrier recombination parameters in diamond after surface boron implantation and annealing
Carrier recombination parameters in diamond after surface boron implantation and annealing Open
An optical pump–probe technique was used to detect spatial distribution of carrier lifetimes across the thickness of a high-quality diamond device structure. Two samples with as-received and boron implanted surfaces were compared to assess…
View article: Recombination and diffusion processes in electronic grade 4H silicon carbide
Recombination and diffusion processes in electronic grade 4H silicon carbide Open
Carrier dynamics in n-type 4H-SiC epilayers of varying thicknesses and low Z 1/2 defect concentrations are investigated here in wide ranges of excess carrier density and temperature. Several techniques are employed to monitor carrier diffu…