Explanipedia

One‐Dimensional Hydrogen Chains in Li–Hf–H System: A Pathway to High Superconductivity Under High Pressure Open

Kang Yang, Wenwen Cui, Tong Yang, Shicong Ding, P. T. Lai , et al. · 2025

The recent discovery of high‐critical‐temperature (high‐ T c ) superconductivity in hydrides such as H 3 S and LaH 10 has significantly advanced the quest for room‐temperature superconductors. This work reports a new class of high‐ T c hyd…

Remote Phonon Scattering in InGaZnO Thin-Film Transistor with Double-Layered High-κ Gate Dielectric Open

Hao Sun, Yuanxiao Ma, Z.M. Liu, P. T. Lai · 2023

NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors Open

Yuan Xiao, Qing He Wang, Haining Chen, P. T. Lai, Wing Man Tang · 2023

NdON, HfON, and their mixtures (Nd x Hf (1− x ) ON) with different Hf contents are adopted as the gate dielectrics of pentacene organic thin‐film transistors (OTFTs). Their capacitance–voltage characteristics reveal that the Hf incorporati…

Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors Open

Hui Su, Wing Man Tang, P. T. Lai · 2022

To study the effect of dopant redistribution at/near the gate-dielectric/gate-electrode interface during high-temperature processing on surface plasmon resonance in InGaZnO thin-film transistor, boron-doped Si wafers (resistivity = 0.02–0.…

Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric Open

Yuanxiao Ma, P. T. Lai, Wing Man Tang · 2022

When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti…

A Method for Thermal Resistance Test of Reverse-Conducting IGBT (RC-IGBT) Open

Yuan Chen, P. Zhang, Xiao Hu, Hong‐Zhong Huang, P. T. Lai , et al. · 2021

The RC-IGBT is integrated IGBT and fast recovery diode (FRD) on the same chip. RC-IGBT has smaller size, higher power density, lower cost, and higher reliability. However, due to the snap-back effect, the traditional test circuit and metho…

Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress Open

Yuan Ren, Yiqiang Chen, Chang Liu, Xinbing Xu, Rui Gao , et al. · 2021

The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper. The result shows that the output and tran…

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode Open

Ya Liang Zheng, Wing Man Tang, Tony Chau, J.K.O. Sin, P. T. Lai · 2021

A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC h…

Issue information Open

J J Earnshaw, J. H. Beynon, C.H.C. Dejong, The Netherlands, Martin Evans , et al. · 2019

Two-Photon Fluorescence of Ca2+Migration in Mice With Vibrating Needle Open

Xiaoyue Chang, Qihua He, P. T. Lai, S. C. Chan, Edward S. Yang · 2019

We report an experiment using a vibrating needle to activate calcium ions and waves in mice muscle tissue fibers. In vivo Ca²⁺ migration in mice was observed along with its muscle pathways using two-photon laser fluorescence.

Advances in La-Based High-k Dielectrics for MOS Applications Open

Lu Liu, Wing Man Tang, P. T. Lai · 2019

This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects…

Issue information Open

J J Earnshaw, J. H. Beynon, C.H.C. Dejong, The Netherlands, Martin Evans , et al. · 2018

Issue Information Open

J J Earnshaw, J Beynon, C. Dejong, Matthew C. Evans, Robert J. Hinchliffe , et al. · 2018

Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode Open

Xiaodong Huang, F. Zhang, Xiaoyan Gan, Qiliang Huang, J. Z. Yang , et al. · 2018

The electrochemical reactions of SiC film with Li⁺ have been investigated by electrochemical characterization and X-ray photoelectron spectroscopy.

High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate Open

L. X. Qian, Huafan Zhang, P. T. Lai, Zehan Wu, Xingzhao Liu · 2017

Recently, monoclinic Ga2O3 (beta-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-p…

Effects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor Open

Y R Liu, Huamao Huang, P. T. Lai, Weijing Wu, Rongsheng Chen · 2017

A bottom-gate zinc-oxide thin-film transistor (ZnO TFT) with high-k NbLaO as gate dielectric was fabricated on indium tin oxide-coated glass substrate by radio frequency sputtering. The NbLaO gate dielectric was annealed in N2 at different…

An Improved Racetrack Structure for Transporting a Skyrmion Open

P. T. Lai, Guoping Zhao, Huadong Tang, Nian Ran, Shengyuan Wu , et al. · 2017

Magnetic skyrmions are promising building blocks for next generation data storage due to their stability, small size and extremely low currents to drive them, which can be used instead of traditional magnetic domain walls to store informat…

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric Open

L. N. Liu, H. W. Choi, Jing-Ping Xu, P. T. Lai · 2017

A GaAs metal-oxide-semiconductor (MOS) capacitor using NbAlON as a gate dielectric with different Nb contents is fabricated. Experimental results show that the k value and crystallization temperature of the AlON dielectric can be improved …

The influence of the edge effect on the skyrmion generation in a magnetic nanotrack Open

Nian Ran, Guoping Zhao, Huadong Tang, Laichuan Shen, P. T. Lai , et al. · 2017

Magnetic skyrmions might be used for building next-generation nanomagnetic and spintronic devices, as they have several perspective properties, such as topologically protected stability, nanoscale size, and ultra-low depinning current dens…

Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications Open

R. P. Shi, Xiaodong Huang, J.K.O. Sin, P. T. Lai · 2016

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes Open

L. X. Qian, X. Z. Liu, T. Y. Sheng, Weili Zhang, Yanrong Li , et al. · 2016

A four-terminal photodetector was fabricated on the (2¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its tran…

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation Open

Lining Liu, H. W. Choi, P. T. Lai, Jing-Ping Xu · 2015

Gallium arsenide (semiconductor) (GaAs) metal-oxide-semiconductor capacitors with fluorine-incorporated TaHfON as gate dielectric are fabricated by pre- or postdeposition fluorine plasma treatment and their electrical and physical properti…

Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric Open

Lishi Wang, J.P. Xu, L. Liu, H. H. Lu, P. T. Lai , et al. · 2015

InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of t…

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