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View article: Identifying grain boundary and intragranular pinning centres in Sm2(Co,Fe,Cu,Zr)17 permanent magnets to guide performance optimisation
Identifying grain boundary and intragranular pinning centres in Sm2(Co,Fe,Cu,Zr)17 permanent magnets to guide performance optimisation Open
Permanent magnets draw their properties from a complex interplay of chemical composition and phase, each with their associated intrinsic magnetic properties. Gaining an understanding of these interactions is the key to deciphering the orig…
View article: Structural and Electrical Behavior of Swift Heavy Ion Irradiated Hafnium Oxide Polymorphs in Ferroelectric and Resistive Memories
Structural and Electrical Behavior of Swift Heavy Ion Irradiated Hafnium Oxide Polymorphs in Ferroelectric and Resistive Memories Open
Hafnium oxide (HfO 2 ) exhibits multiple polymorphs, each with distinct properties and is a promising material for non‐volatile memory technologies in radiation‐harsh environments. To gain a comprehensive understanding of the radiation res…
View article: Enhanced Linear Conductance Modulation by La‐Doping in HfO <sub>2</sub> ‐Based Memristors for Neuromorphic Applications
Enhanced Linear Conductance Modulation by La‐Doping in HfO <sub>2</sub> ‐Based Memristors for Neuromorphic Applications Open
Efficient computing systems require low‐power and high‐density memory technologies capable of supporting advanced applications such as neuromorphic computing and artificial intelligence. Hafnium oxide (HfO 2 ) based resistive random‐access…
View article: Thermally Activated Negative Differential Resistance VO <sub> <i>x</i> </sub> Memristor with Switchable Rate and Leaky Integrate-and-Fire Spiking Dynamics
Thermally Activated Negative Differential Resistance VO <sub> <i>x</i> </sub> Memristor with Switchable Rate and Leaky Integrate-and-Fire Spiking Dynamics Open
Spiking neural networks (SNNs) require neuron devices that are both compact and capable of supporting continuous-time and event-based dynamics. Here, we demonstrate a VOx-based threshold switching memristor (TSM) that intrinsically enables…
View article: All HfO<sub><i>x</i></sub>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer
All HfO<sub><i>x</i></sub>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer Open
Resistive random-access memory based on hafnia is a potential candidate for next-generation memories. However, there are some key challenges to overcome, including the stochastic nature of the filament formation during electroforming and S…
View article: Optimizing $α''$-Fe$_{16}$N$_2$ as permanent magnet via alloying
Optimizing $α''$-Fe$_{16}$N$_2$ as permanent magnet via alloying Open
Based on systematic first-principles calculations, we investigate the effects of 27 alloying elements on the intrinsic magnetic properties of Fe$_{16}$N$_2$, in order to further optimize its properties for permanent magnet applications. An…
View article: Assessing electric-field engineering of filamentary-type conduction in Cu/HfO2/Pt memristive devices using the quantum point-contact model
Assessing electric-field engineering of filamentary-type conduction in Cu/HfO2/Pt memristive devices using the quantum point-contact model Open
We explored the role of electric-field engineering in controlling filamentary-type conduction in Cu/HfO2/Pt memristive devices, utilizing the quantum point-contact (QPC) model for analysis. In a previous study, we reported that devices wit…
View article: Electro-optically tunable Barium Strontium Titanate Filter for the 2 μm range
Electro-optically tunable Barium Strontium Titanate Filter for the 2 μm range Open
We demonstrate a novel tunable optical notch filter with maximum transmittance of 67% based on a thin film Ba0.5Sr0.5TiO3 (BST) layer integrated into a Fabry–Pérot cavity, designed for operation at 2μm. The filter structure consists of a 4…
View article: Electro-optically tunable Barium Strontium Titanate Filter for the 2 μm range
Electro-optically tunable Barium Strontium Titanate Filter for the 2 μm range Open
We demonstrate a novel tunable optical notch filter with maximum transmittance of 67% based on a thin film Ba0.5Sr0.5TiO3 (BST) layer integrated into a Fabry–Pérot cavity, designed for operation at 2μm. The filter structure consists of a 4…
View article: Off‐Stoichiometry Engineering of the Electrical and Optical Properties of SrNbO<sub>3</sub> Using Oxide Molecular Beam Epitaxy
Off‐Stoichiometry Engineering of the Electrical and Optical Properties of SrNbO<sub>3</sub> Using Oxide Molecular Beam Epitaxy Open
The highly conducting and transparent inorganic perovskites Sr B O 3 with V, Nb, Mo, and their mixtures at the B ‐site have recently attracted the attention of the oxide electronics community as novel alternative transparent conducting oxi…
View article: Improved lattice elongation for Fe8N<i>x</i> (<i>x</i> &gt; 1) thin films prepared via nitrogen ion implantation
Improved lattice elongation for Fe8N<i>x</i> (<i>x</i> > 1) thin films prepared via nitrogen ion implantation Open
Iron nitrides α″-Fe16N2 and α′-Fe8N have attracted significant interest due to their potential as a rare-earth-free semi-hard magnetic materials. In this work, a systematic investigation of nitrogen ion implantation fluences on iron thin f…
View article: Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices
Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices Open
Altres ajuts: acords transformatius de la UAB
View article: Novel Insights into Enhanced Stability of Li‐Rich Layered and High‐Voltage Olivine Phosphate Cathodes for Advanced Batteries through Surface Modification and Electron Structure Design
Novel Insights into Enhanced Stability of Li‐Rich Layered and High‐Voltage Olivine Phosphate Cathodes for Advanced Batteries through Surface Modification and Electron Structure Design Open
The design of cathode/electrolyte interfaces in high‐energy density Li‐ion batteries is critical to protect the surface against undesirable oxygen release from the cathodes when batteries are charged to high voltage. However, the involveme…
View article: Off-stoichiometry engineering of the electrical and optical properties of SrNbO$_3$ by oxide molecular beam epitaxy
Off-stoichiometry engineering of the electrical and optical properties of SrNbO$_3$ by oxide molecular beam epitaxy Open
The highly conducting and transparent inorganic perovskites SrBO$_3$ with V, Nb, Mo, and their mixtures at the B-site have recently attracted the attention of the oxide electronics community as novel alternative transparent conducting oxid…
View article: Growth Engineering of SrNbO3 Perovskite Oxide by Pulsed Laser Deposition and Molecular Beam Epitaxy
Growth Engineering of SrNbO3 Perovskite Oxide by Pulsed Laser Deposition and Molecular Beam Epitaxy Open
Molecular beam epitaxy (MBE) is a state-of-the-art technique for depositing thin films with precise stoichiometric control. However, when depositing oxides of perovskite-type ABO3, this process becomes challenging as controlling the flux r…
View article: Effect of valence electrons on the core level x-ray photoelectron spectra of niobium oxide thin films prepared by molecular beam epitaxy
Effect of valence electrons on the core level x-ray photoelectron spectra of niobium oxide thin films prepared by molecular beam epitaxy Open
X-ray photoelectron spectroscopy (XPS) is a versatile tool for identifying the chemical and electronic state of an element. However, the presence of various initial- and final-state effects makes the interpretation of XPS spectra tricky an…
View article: Influence of B-site variation on the bifunctional performance of LaFexCo1-xO3 for Zn-air battery
Influence of B-site variation on the bifunctional performance of LaFexCo1-xO3 for Zn-air battery Open
Perovskites offer great promise as bifunctional catalyst in Zn-air batteries or reversible fuel cells. While there are optimization efforts for either oxygen reduction reaction (ORR) or oxygen evolution reaction (OER), there is a lack of i…
View article: Weld-free mounting of lamellae for electrical biasing operando TEM
Weld-free mounting of lamellae for electrical biasing operando TEM Open
Recent advances in microelectromechanical systems (MEMS)-based substrates and sample holders for in situ transmission electron microscopy (TEM) are currently enabling exciting new opportunities for the nanoscale investigation of materials …
View article: Giant Critical Thickness in Highly Conducting Epitaxial SrMoO<sub>3</sub> Electrodes Investigated by Lift‐Off Membranes
Giant Critical Thickness in Highly Conducting Epitaxial SrMoO<sub>3</sub> Electrodes Investigated by Lift‐Off Membranes Open
Within the huge perovskite materials family, thin films of highly conducting materials such as SrMoO 3 , SrNbO 3 , and SrVO 3 are candidates for low‐loss bottom electrodes in epitaxial all‐oxide devices, in particular for high‐frequency ap…
View article: Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO<sub>x</sub> Thin Films
Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO<sub>x</sub> Thin Films Open
HfO 2 is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiome…
View article: Operando two-terminal devices inside a transmission electron microscope
Operando two-terminal devices inside a transmission electron microscope Open
Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal structures, is key to improving material stack design and in…
View article: Element-Specific Study of Magnetic Anisotropy and Hardening in SmCo<sub>5–<i>x</i></sub>Cu<sub><i>x</i></sub> Thin Films
Element-Specific Study of Magnetic Anisotropy and Hardening in SmCo<sub>5–<i>x</i></sub>Cu<sub><i>x</i></sub> Thin Films Open
This work investigates the effect of copper substitution on the magnetic properties of SmCo5 thin films synthesized by molecular beam epitaxy. A series of thin films with varying concentrations of Cu were grown under otherwise identical co…
View article: Role of kinetic energy on Nb3Sn thin films by low-temperature co-sputtering
Role of kinetic energy on Nb3Sn thin films by low-temperature co-sputtering Open
Nb3Sn is a promising thin film material for superconducting radio frequency (SRF) applications. Although surface resistivity, critical temperature, and critical field are advantageous in comparison to pure Nb, currently the performance of …
View article: Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks
Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks Open
This paper reports a simulation study concerning the effect of yttrium oxide stoichiometry on output features of a memristor-based single layer perceptron neural network. To carry out this investigation, a material-oriented behavioral comp…
View article: Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems Open
Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in …
View article: Impact of Strain Engineering on Antiferroelectricity in NaNbO<sub>3</sub> Thin Films
Impact of Strain Engineering on Antiferroelectricity in NaNbO<sub>3</sub> Thin Films Open
Thin films of NaNbO3 were grown on various substrates to investigate the effect of epitaxial strain on their structural and electrical properties. Reciprocal space maps confirmed the presence of epitaxial strain from +0.8% to -1.2%. A bulk…