Jung‐Hee Lee
YOU?
Author Swipe
View article: Measurement of helium concentration in air by using a microheater on a polyimide substrate
Measurement of helium concentration in air by using a microheater on a polyimide substrate Open
View article: Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region Open
A normally-off GaN MOSFET is successfully fabricated by using the selective regrowth technique (SRT) with regrown AlGaN layer on source/drain (S/D) region. The GaN MOSFET with regrown AlGaN layer and Lg of 10 μm shows enhanced electrical p…
View article: Current Status of Pre-Calibration Techniques for Enhancing the Positional Accuracy of the Agricultural and Forestry Satellite
Current Status of Pre-Calibration Techniques for Enhancing the Positional Accuracy of the Agricultural and Forestry Satellite Open
The agricultural and forestry satellite, scheduled for launch in 2025, is a satellite being jointly developed by the Ministry of Science and ICT, the Rural Development Administration, and the Korea Forest Service of South Korea. Prior to i…
View article: Improvement of Electrical Performance in Normally-Off Gan Mosfet with Regrown Algan Layer on the Source/Drain Region
Improvement of Electrical Performance in Normally-Off Gan Mosfet with Regrown Algan Layer on the Source/Drain Region Open
View article: Minimum Detection Concentration of Hydrogen in Air Depending on Substrate Type and Design of the 3ω Sensor
Minimum Detection Concentration of Hydrogen in Air Depending on Substrate Type and Design of the 3ω Sensor Open
Hydrogen has emerged as a promising carbon-neutral fuel source, spurring research and development efforts to facilitate its widespread adoption. However, the safe handling of hydrogen requires precise leak detection sensors due to its low …
View article: Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer Open
In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain curren…
View article: Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts Open
In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabri…
View article: Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs Open
We have studied the effects of proton irradiation on the AlGaN/GaN HEMTs with AlN buffer layer as well as conventional GaN buffer layer. It was found that a short time proton irradiation (~ 50 sec) can promote beneficial effects on device …
View article: Potato Chip-Like 0D Interconnected ZnCo2O4 Nanoparticles for High-Performance Supercapacitors
Potato Chip-Like 0D Interconnected ZnCo2O4 Nanoparticles for High-Performance Supercapacitors Open
Zinc cobaltite (ZnCo2O4) is an emerging electrode material for supercapacitors due to its rich redox reactions involving multiple oxidation states and different ions. In the present work, potato chip-like 0D interconnected ZnCo2O4 nanopart…
View article: Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs Open
The effects of high energy (57 MeV) proton irradiation on the electrical characteristics of AlGaN/GaN MISHEMTs were investigated. The MISHEMTs were fabricated with two different types of gate dielectrics, atomic layer deposited (ALD)-Al2O3…
View article: Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes Open
AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AF…
View article: A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application
A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application Open
The effects of interface charges on the performances of gate-all-around (GAA) GaN vertical nanowire MOSFETs with different geometries have been studied. Geometrical effect on the gate current of vertical GAA GaN nanowire MOSFET has also be…
View article: Effect of <i>In-Situ</i> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs
Effect of <i>In-Situ</i> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs Open
AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors (MISHFETs) with different thickness of in-situ silicon carbon nitride (SiCN) cap layer were investigated. It was found that in-situ SiCN layer not only increa…
View article: Cover Image
Cover Image Open
The cover image is based on the Special Issue Research Article Design and Optimization of GaN-based Betavoltaic Cell for Enhanced Output Power Density by Young Jun Yoon et al., https://doi.org/10.1002/er.5909.
View article: Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN
Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN Open
In this study, a PdAl (20 nm)/Au (30 nm) metal stack scheme is used for forming low-ohmic-resistance contact on Mg-doped (1.5 × 1017 cm−3) p-type AlGaN at various annealing temperatures. Using a circular-transmission line model, the specif…
View article: Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with Controlling Threshold Voltages
Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with Controlling Threshold Voltages Open
AlGaN/GaN metal-insulator-semiconductor field-effect transistors with fin structures (AlGaN/GaN MIS-FinFETs) were fabricated and characterized by changing fin width and using different dielectric layers. The FinFET with 20 nm-thick SiO2 di…
View article: Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Open
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick…
View article: Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell
Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell Open
In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (JSC) and open-circuit voltage (VOC) of the devices were in…
View article: Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability Open
A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high Vt…
View article: Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs Open
International audience
View article: Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation
Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation Open
International audience
View article: L<sub>g</sub> = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f<sub>T</sub> and f<sub>max</sub> in excess of 700 GHz
L<sub>g</sub> = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f<sub>T</sub> and f<sub>max</sub> in excess of 700 GHz Open
In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance ( g m_max ) = 2.8 mS μ m −1 at V DS = 0.8 V and on…
View article: GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate Open
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ul…
View article: Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors Open
In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we v…
View article: High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor
High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor Open
The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an ope…
View article: Dual-Surface Modification of AlGaN/GaN HEMTs Using TMAH and Piranha Solutions for Enhancing Current and 1/f-Noise Characteristics
Dual-Surface Modification of AlGaN/GaN HEMTs Using TMAH and Piranha Solutions for Enhancing Current and 1/f-Noise Characteristics Open
We demonstrated dual-surface modification of GaN/AlGaN/GaN high-electron mobility transistors using tetramethylammonium hydroxide (TMAH) and piranha solutions prior to gate metallization. The TMAH-treated device exhibits improved performan…
View article: High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier Open
In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted of periodically carbon-doped (PCD) GaN buffer layer and AlGaN back barrier layer. The PCD…
View article: Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs Open
International audience
View article: Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer
Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer Open
The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with …
View article: Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel
Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel Open
Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation beha…