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View article: Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes
Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes Open
The intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem. However, the reported studies on diodes based on 2…
View article: Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits
Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits Open
View article: Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers
Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers Open
The self‐aligned gate (SAG) transistor architecture is attractive for electronic circuit applications due to its enabling attributes, including low parasitic capacitances and higher frequency operation. However, SAG transistors often rely …
View article: Thiol Carbazole Self‐Assembled Monolayers as Tunable Carrier Injecting Interlayers for Organic Transistors and Complementary Circuits
Thiol Carbazole Self‐Assembled Monolayers as Tunable Carrier Injecting Interlayers for Organic Transistors and Complementary Circuits Open
The significant contact resistance at the metal‐semiconductor interface is a well‐documented issue for organic thin‐film transistors (OTFTs) that hinders device and circuit performance. Here, this issue is tackled by developing three new t…
View article: Wafer‐Scale Transfer of MXene Films with Enhanced Device Performance via 2D Liquid Intercalation
Wafer‐Scale Transfer of MXene Films with Enhanced Device Performance via 2D Liquid Intercalation Open
Wafer‐scale transfer processes of 2D materials significantly expand their application space in scalable microelectronic devices with excellent and tunable properties through van der Waals (vdW) stacking. Unlike many 2D materials, wafer‐sca…
View article: High‐Performance Nanogap Photodetectors Based on 2D Halide Perovskites with a Novel Spacer Cation
High‐Performance Nanogap Photodetectors Based on 2D Halide Perovskites with a Novel Spacer Cation Open
2D Ruddlesden─Popper (RP) halide perovskites are attracting increasing research interest due to their enhanced stability compared to 3D perovskites. However, the quantum confinement effect of bulk organic spacers hinders the separation and…
View article: Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing
Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing Open
Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, …
View article: 23.6 % Efficient perovskite-organic tandem photovoltaics enabled by recombination layer engineering
23.6 % Efficient perovskite-organic tandem photovoltaics enabled by recombination layer engineering Open
View article: A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability
A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability Open
Graphene geometric diodes, with applications in THz detection, energy harvesting, and high‐speed rectification, have been previously constrained by graphene quality and geometry feature size. This study presents significant advancements in…
View article: High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
High-performance van der Waals antiferroelectric CuCrP2S6-based memristors Open
View article: Fully Sprayed Metal Oxide Transistors Utilizing Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXene Contacts
Fully Sprayed Metal Oxide Transistors Utilizing Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXene Contacts Open
Printable large-area electronics continue to attract increasing interest from the scientific and industrial communities, owing to their potential for cost-efficient manufacturing. However, the exerted efforts primarily focus on processing …
View article: Synergy of MXene with Se Infiltrated Porous N‐Doped Carbon Nanofibers as Janus Electrodes for High‐Performance Sodium/Lithium–Selenium Batteries
Synergy of MXene with Se Infiltrated Porous N‐Doped Carbon Nanofibers as Janus Electrodes for High‐Performance Sodium/Lithium–Selenium Batteries Open
Metal–selenium (M–Se) batteries are considered promising candidates for next‐generation battery technologies owing to their high energy density and high‐rate capability. However, Se cathode suffers from poor cycling performance and low Cou…
View article: Two-dimensional ferroelectricity and antiferroelectricity for next-generation computing paradigms
Two-dimensional ferroelectricity and antiferroelectricity for next-generation computing paradigms Open
View article: Etched p-Type Si Nanowires for Efficient Ozone Decomposition
Etched p-Type Si Nanowires for Efficient Ozone Decomposition Open
View article: Flexible Conductive Anodes Based on 3D Hierarchical Sn/NS-CNFs@rGO Network for Sodium-Ion Batteries
Flexible Conductive Anodes Based on 3D Hierarchical Sn/NS-CNFs@rGO Network for Sodium-Ion Batteries Open
Metallic Sn has provoked tremendous progress as an anode material for sodium-ion batteries (SIBs). However, Sn anodes suffer from a dramatic capacity fading, owing to pulverization induced by drastic volume expansion during cycling. Herein…
View article: Reduced Graphene Oxide-Coated Si Nanowires for Highly Sensitive and Selective Detection of Indoor Formaldehyde
Reduced Graphene Oxide-Coated Si Nanowires for Highly Sensitive and Selective Detection of Indoor Formaldehyde Open
View article: Thin‐Film Transistors: ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages (Adv. Electron. Mater. 1/2018)
Thin‐Film Transistors: ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages (Adv. Electron. Mater. 1/2018) Open
High-performance, low-power and enhancement-mode ZnO nanofiber thin-film transistors with impressive electrical characteristics, such as a small positive threshold voltage of ≈0.9 V, are demonstrated by Fukai Shan, Johnny C. Ho, and co-wor…
View article: ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages
ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages Open
Although significant progress has been made towards using ZnO nanofibers (NFs) in future high‐performance and low‐cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irreg…
View article: Enhanced Photodegradation Activity of Hydrogen-Terminated Si Nanowires Arrays with Different-Oriented Crystal Phases
Enhanced Photodegradation Activity of Hydrogen-Terminated Si Nanowires Arrays with Different-Oriented Crystal Phases Open
Although Si nanowires (NWs) arrays are superior candidates for visible light photocatalysis, reports about the photodegradation activity of various crystal-orientated Si NWs are still insufficient. Here, light-doped hydrogen-terminated Si …
View article: High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks
High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks Open
Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on-off current ratios (I-on/I-off), and la…