Loïck Le Guevel
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View article: Impedancemetry of multiplexed quantum devices using an on-chip cryogenic complementary metal-oxide-semiconductor active inductor
Impedancemetry of multiplexed quantum devices using an on-chip cryogenic complementary metal-oxide-semiconductor active inductor Open
International audience
View article: Electronique cryogénique pour l'ingénierie quantique
Electronique cryogénique pour l'ingénierie quantique Open
Thousands to millions of sensitive signals will need to be conveyed through all the temperature stages of a dilution fridge to operate future large-scale quantum processors made of many quantum bits. The exploding number of heat-conductive…
View article: CMOS Integrated Circuits for the Quantum Information Sciences
CMOS Integrated Circuits for the Quantum Information Sciences Open
Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical in…
View article: Demonstration of the Two-Fluxonium Cross-Resonance Gate
Demonstration of the Two-Fluxonium Cross-Resonance Gate Open
The superconducting fluxonium qubit has a great potential for high-fidelity quantum gates with its long coherence times and strong anharmonicity at the half flux quantum sweet spot. However, current implementations of two-qubit gates compr…
View article: Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor Open
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorpor…
View article: Low-power transimpedance amplifier for cryogenic integration with quantum devices
Low-power transimpedance amplifier for cryogenic integration with quantum devices Open
The development of quantum electronic devices operating below a few Kelvin degrees is raising the demand for cryogenic complementary metal-oxide-semiconductor electronics (CMOS) to be used as in situ classical control/readout circuitry. Ha…
View article: 19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot
19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot Open
International audience
View article: Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening Open
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given b…