Luca Petit
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View article: InAs-Al hybrid devices passing the topological gap protocol
InAs-Al hybrid devices passing the topological gap protocol Open
Topological phases of matter can enable highly stable qubits with small footprints, fast gate times, and digital control. These hardware-protected qubits must be fabricated with a material combination in which a topological phase can relia…
View article: Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin
Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin Open
Spin qubits in quantum dots define an attractive platform for quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate above one Kelvin. However, despite de…
View article: Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin
Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin Open
Spin qubits in quantum dots define an attractive platform for quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate above one Kelvin. However, despite de…
View article: InAs-Al Hybrid Devices Passing the Topological Gap Protocol
InAs-Al Hybrid Devices Passing the Topological Gap Protocol Open
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobilit…
View article: Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum Dots
Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum Dots Open
We investigate hole spin relaxation in the single- and multihole regime in a 2 × 2 germanium quantum dot array. We find spin relaxation times T1 as high as 32 and 1.2 ms for quantum dots with single- and five-hole occupations, respectively…
View article: High-fidelity two-qubit gates in silicon above one Kelvin
High-fidelity two-qubit gates in silicon above one Kelvin Open
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding on…
View article: Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots
Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots Open
Extremely long coherence times, excellent single-qubit gate fidelities, and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processin…
View article: Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits
Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits Open
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…
View article: Field-enhanced design of steep-slope VO<inf>2</inf> switches for low actuation voltage
Field-enhanced design of steep-slope VO2 switches for low actuation voltage Open
The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. …
View article: Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters
Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters Open
We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive s…