Lukas Peters
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View article: Time‐Resolved Cathodoluminescence Spectroscopy of Oxygen‐Related Defects in AlN Layers
Time‐Resolved Cathodoluminescence Spectroscopy of Oxygen‐Related Defects in AlN Layers Open
High‐temperature annealing significantly improves the crystal quality of sputter‐deposited AlN templates, but at the same time introduces a high concentration of oxygen‐related point defects. The origin of this oxygen‐related defect lumine…
View article: Parasitic AlxOyNz surface defects on high-temperature annealed AlN and their role in hillock formation
Parasitic AlxOyNz surface defects on high-temperature annealed AlN and their role in hillock formation Open
High quality AlN buffer layers on sapphire wafers are a prerequisite for further improving UV LEDs. In addition, AlN templates with low screw-dislocation density might be interesting for future power electronic devices. High-temperature an…
View article: Publisher's Note: “Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing” [J. Appl. Phys. 133, 235704 (2023)]
Publisher's Note: “Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing” [J. Appl. Phys. 133, 235704 (2023)] Open
The sentence "Based on the available Al and N 2 FactSage data, one has to expect partial pressures of p eq,Al ≈ 137.7 Pa and p eq,N2 68:9 Pa at typically used temperatures of 1973.15K in between two wafers in face-to-face configuration dur…
View article: Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing
Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing Open
High-temperature annealing (HTA) is one of the most promising techniques to produce high-quality, cost-efficient AlN templates for further epitaxial growth of AlGaN devices. Unfortunately, the yield of this process seems to be limited due …
View article: A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN
A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN Open
Herein, carbon‐implanted high‐temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main,…
View article: A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN
A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN Open
The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light‐emitting diodes (LEDs) emitting in the UV‐C regime. Carbon impurities in the nitrogen sublattice (C N ) of AlN are believed to be the or…
View article: Gradients in Three-Dimensional Core–Shell GaN/InGaN Structures: Optimization and Physical Limitations
Gradients in Three-Dimensional Core–Shell GaN/InGaN Structures: Optimization and Physical Limitations Open
Three-dimensional InGaN/GaN nano- and microstructures with high aspect ratios and large active sidewall areas are still of great interest in the field of optoelectronics. However, when grown by metalorganic chemical vapor deposition (MOCVD…