Hai Lu
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View article: Demonstration of AlGaN solar-blind ultraviolet photoconductor with an ultra-fast nanosecond transient response
Demonstration of AlGaN solar-blind ultraviolet photoconductor with an ultra-fast nanosecond transient response Open
Conventional AlGaN solar-blind ultraviolet (UV) photoconductors based on Si- or Ge-doped conduction channels are plagued by the impurity-related persistent photoconductivity (PPC) effect featuring high leakage current, long response time, …
View article: Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure
Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure Open
We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at th…
View article: Bidimensional Carrier Modulation in Nanocolumn‐Array AlGaN p‐i‐n Ultraviolet Photodiodes: Achieving External Quantum Efficiency Over 1000%
Bidimensional Carrier Modulation in Nanocolumn‐Array AlGaN p‐i‐n Ultraviolet Photodiodes: Achieving External Quantum Efficiency Over 1000% Open
High‐sensitivity, low‐power ultraviolet (UV) detection remains a major challenge in optoelectronics, with complex physical mechanisms requiring exploration as devices transition from thin‐film to low‐dimensional structures. Herein, a high‐…
View article: COph100: A comprehensive fundus image registration dataset from infants constituting the "RIDIRP" database
COph100: A comprehensive fundus image registration dataset from infants constituting the "RIDIRP" database Open
Retinal image registration is vital for diagnostic therapeutic applications within the field of ophthalmology. Existing public datasets, focusing on adult retinal pathologies with high-quality images, have limited number of image pairs and…
View article: Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability
Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability Open
High-responsivity and energy-saving ultraviolet photodetectors become crucial components for modern optoelectronic information sensing and communication systems. This study presents an advanced self-powered MXene/GaN Schottky ultraviolet p…
View article: Immediate and long-term brain activation of acupuncture on ischemic stroke patients: an ALE meta-analysis of fMRI studies
Immediate and long-term brain activation of acupuncture on ischemic stroke patients: an ALE meta-analysis of fMRI studies Open
Background Acupuncture, as an alternative and complementary therapy recommended by the World Health Organization for stroke treatment, holds potential in ameliorating neurofunctional deficits induced by ischemic stroke (IS). Understanding …
View article: Real-Time Terahertz Modulation Using Gold-MoS<sub>2</sub> Metasurface With Electromagnetically Induced Transparency-Like Resonance
Real-Time Terahertz Modulation Using Gold-MoS<sub>2</sub> Metasurface With Electromagnetically Induced Transparency-Like Resonance Open
Terahertz (THz) communication is a rapidly advancing field with applications spanning space exploration, wireless communication, and security checks. Achieving effective intensity modulation of THz radiation is a crucial requirement for TH…
View article: Investigation of Ohmic contact to plasma-etched n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N by surface treatment
Investigation of Ohmic contact to plasma-etched n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N by surface treatment Open
We investigated the optimization effects of KOH solution treatment and SiN x sacrificial layer treatment on the contact characteristics of V/Al/Ni/Au on plasma-etched n-AlGaN. The results showed that the contacts on n-Al 0.5 Ga 0.5 N with …
View article: Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3
Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3 Open
In this Letter, we investigated the electrostatic control capability and gate reliability of the BaTiO3 integrated AlGaN/GaN HEMTs. The fabricated HEMT exhibits a high peak maximum transconductance of 141 mS/mm, a large ON/OFF current rati…
View article: Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout Open
Bonding pad over active (BPOA) layout, which stacks traditional horizontal structure pad electrodes vertically above the active area, is an area-effective device architecture and packaging-enabled solution for GaN-based high electron mobil…
View article: Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes
Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes Open
We proposed a “Ni sacrifice” method to fabricate Al-based highly reflective p-electrode in the ultraviolet spectral region for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). The “Ni sacrifice” p-electrode could have a high …
View article: Al<sub>0.1</sub>Ga<sub>0.9</sub>N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown
Al<sub>0.1</sub>Ga<sub>0.9</sub>N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown Open
We report high-performance Al 0.1 Ga 0.9 N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with stable breakdown voltages ( V BR ) around 113.4 V, low dark current densities ( J BR ) below 9 × 10 −4 A/cm 2 …
View article: An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics Open
Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics …
View article: Ultraviolet photon-counting single-pixel imaging
Ultraviolet photon-counting single-pixel imaging Open
We demonstrate photon-counting single-pixel imaging in the ultraviolet region. Toward this target, we develop a high-performance compact single-photon detector based on a 4H-SiC single-photon avalanche diode (SPAD), where a tailored readou…
View article: Ultraviolet photon-counting single-pixel imaging
Ultraviolet photon-counting single-pixel imaging Open
We demonstrate photon-counting single-pixel imaging in the ultraviolet region. Toward this target, we develop a high-performance compact single-photon detector based on a 4H-SiC single-photon avalanche diode (SPAD), where a tailored readou…
View article: Photo-Electric response of 4H-SiC APDs at High-Level incident flux
Photo-Electric response of 4H-SiC APDs at High-Level incident flux Open
In many applications, the highest and lowest detectable flux are both important for single photon avalanche photodiodes (APDs). The photocurrent and single-photon-counting performance of 4H-SiC APDs are investigated under a wide-range inci…
View article: An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics Open
Source data of Figures in manuscript and the Supplementary Information have been included.
View article: <i>In situ</i> tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
<i>In situ</i> tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas Open
Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produ…
View article: MATERIAL PROPERTIES AND LOCAL STABILITY OF WAAM STAINLESS STEEL PLATES WITH DIFFERENT DEPOSITION RATES
MATERIAL PROPERTIES AND LOCAL STABILITY OF WAAM STAINLESS STEEL PLATES WITH DIFFERENT DEPOSITION RATES Open
Wire arc additive manufacturing (WAAM) has significant potential to produce freeform, but structurally efficient geometries out of stainless steel, for use in the construction industry, however, there is currently no standardisation of the…
View article: A REEXAMINATION ON CALIBRATION OF CYCLIC CONSTITUTIVE MODEL FOR STRUCTURAL STEELS
A REEXAMINATION ON CALIBRATION OF CYCLIC CONSTITUTIVE MODEL FOR STRUCTURAL STEELS Open
Exquisite calibration of model parameter is crucial for simulation accuracy of cyclic constitutive model. This paper is aiming to clarify the influence of different calibration factors on the calibration results and simulation performances…
View article: FATIGUE BEHAVIOUR OF TITANIUM-CLAD BIMETALLIC STEEL PLATE WITH DIFFERENT INTERFACIAL CONDITIONS
FATIGUE BEHAVIOUR OF TITANIUM-CLAD BIMETALLIC STEEL PLATE WITH DIFFERENT INTERFACIAL CONDITIONS Open
Titanium-clad (TC) bimetallic steel is a type of high-performance steel, with high corrosion resistance attributed to the titanium alloy and economy as well as excellent mechanical properties resulted from structural steel. Such advanced b…
View article: STUDY ON FIRE RESISTANCE OF BOX-TYPE COMPOSITE WALLS
STUDY ON FIRE RESISTANCE OF BOX-TYPE COMPOSITE WALLS Open
The fire resistance limit value of box-type composite walls is one of the important parameters for applying this system. To this end, this article selects different refractory structural measures for the composite wall and analyzes the par…
View article: EXPERIMENTAL INVESTIGATION OF RESIDUAL STRESS IN WELDED T-SECTION BY DOMESTIC Q460 HIGH STRENGTH STEEL
EXPERIMENTAL INVESTIGATION OF RESIDUAL STRESS IN WELDED T-SECTION BY DOMESTIC Q460 HIGH STRENGTH STEEL Open
Residual stress is one of the most important initial imperfections for the buckling behavior of steel compression members. An experimental investigation was carried out to quantify the longitudinal residual stress in welded T-section of do…
View article: NUMERICAL SIMULATION ANALYSIS OF TEMPERATURE FIELD OF BOX-TYPE COMPOSITE WALL
NUMERICAL SIMULATION ANALYSIS OF TEMPERATURE FIELD OF BOX-TYPE COMPOSITE WALL Open
The spatial and temporal characteristics of the internal temperature field of the box-type composite wall have great significance to high temperature mechanical response and fire resistance performance of composite wall subjected to fire. …
View article: ANTI-WIND CAPACITY CHECK AND COLLAPSE ANALYSIS OF EXISTING TRANSMISSION TOWER
ANTI-WIND CAPACITY CHECK AND COLLAPSE ANALYSIS OF EXISTING TRANSMISSION TOWER Open
"With the implementation of the new code for the design of overhead transmission line in China, the design check, maintenance and reinforcement for the existing transmission towers are indispensable. In this paper, based on an existing tra…
View article: FATIGUE PERFORMANCE OF RIB-TO-DECK JOINTS STRENGTHENED WITH INTERNAL WELDING
FATIGUE PERFORMANCE OF RIB-TO-DECK JOINTS STRENGTHENED WITH INTERNAL WELDING Open
"Rib-to-deck joints of orthotropic steel decks (OSDs) in steel bridges are susceptible to longitudinal fatigue cracking, which often results in considerable costs as well as traffic interruption. This paper numerically simulated the Crack …
View article: Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization
Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization Open
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a …