Lyubomir Ahtapodov
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View article: Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications
Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications Open
III-V semiconductor nanowires are considered promising building blocks for\nadvanced photonic devices. One of the key advantages is that the lattice\nmismatch can easily be accommodated in 1D structures, resulting in superior\nheteroepitax…
View article: Focused ion beam lithography for position-controlled nanowire growth
Focused ion beam lithography for position-controlled nanowire growth Open
To exploit the promising properties of semiconductor nanowires and ensure the uniformity required to achieve device integration, their position on the growth substrate must be controlled. This work demonstrates the direct patterning of a S…
View article: Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes
Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes Open
Flip-chip ultraviolet light-emitting diodes based on self-assembled GaN/AlGaN nanocolumns have been fabricated, exploiting single-layer graphene not only as a growth substrate but also as a transparent conducting electrode. High crystallin…
View article: Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature Open
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-c…
View article: Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert
Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert Open
By applying a correlated micro-photoluminescence spectroscopy and transmission electron microscopy (TEM) approach, we have utilized molecular beam epitaxy grown self-catalysed GaAs nanowires (NWs) with an axial GaAsSb insert to determine t…