Explanipedia

Single shot latched readout of a quantum dot qubit using barrier gate pulsing Open

Sanghyeok Park, J D Benson, J. Corrigan, J. P. Dodson, S. N. Coppersmith , et al. · 2025

Qubit latching techniques require precise tuning of multiple tunnel rates, which can be challenging when a qubit is coupled to a single reservoir. Here, we present such a method for single-shot measurement, in which the barrier gate is pul…

Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex Open

Benjamin D. Woods, Merritt P. Losert, Nasir R. Elston, M. A. Eriksson, S. N. Coppersmith , et al. · 2025

The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically size…

Valley Splitting Correlations Across a Silicon Quantum Well Open

Jonathan C. Marcks, Emily Eagen, Emma Brann, Merritt P. Losert, Tae-Hun Oh , et al. · 2025

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state t…

Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling Open

Benjamin Harpt, J. Corrigan, Nathan Holman, Piotr Marciniec, D. Rosenberg , et al. · 2025

We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by ~10 GHz, de…

Automation of quantum dot measurement analysis via explainable machine learning Open

Daniel Schug, Tyler J. Kovach, Michael S. Wolfe, Jared Benson, Sanghyeok Park , et al. · 2024

The rapid development of quantum dot (QD) devices for quantum computing has necessitated more efficient and automated methods for device characterization and tuning. Many of the measurements acquired during the tuning process come in the f…

Data needs and challenges for quantum dot devices automation Open

Justyna P. Zwolak, Jacob M. Taylor, Reed W. Andrews, J D Benson, Garnett W. Bryant , et al. · 2024

Gate-defined quantum dots are a promising candidate system for realizing scalable, coupled qubit systems and serving as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections …

Control of threshold voltages in / quantum devices via optical illumination Open

M. A. Wolfe, Brighton Coe, Justin S. Edwards, Tyler J. Kovach, Thomas McJunkin , et al. · 2024

Optical illumination of quantum dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic thresho…

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations Open

Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph, Collin C. D. Frink, Robert Joynt , et al. · 2024

Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. …

Light-induced offset charge tracking in Si/SiGe quantum devices Open

Brighton Coe, Michael S. Wolfe, J D Benson, Tyler J. Kovach, Alan J. Rogers , et al. · 2024

Control of threshold voltages in Si/SiGe quantum devices via optical illumination Open

M. A. Wolfe, B. Coe, Justin S. Edwards, Tyler J. Kovach, Thomas McJunkin , et al. · 2023

Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic thresho…

Data needs and challenges for quantum dot devices automation Open

Justyna P. Zwolak, Jacob M. Taylor, Reed W. Andrews, J D Benson, Garnett W. Bryant , et al. · 2023

Gate-defined quantum dots are a promising candidate system for realizing scalable, coupled qubit systems and serving as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections …

Reducing strain fluctuations in quantum dot devices by gate-layer stacking Open

Collin C. D. Frink, Benjamin D. Woods, Merritt P. Losert, E. R. MacQuarrie, Mark Friesen , et al. · 2023

Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device fu…

Source data for the publication "Longitudinal coupling between a Si/SiGe double quantum dot and an off-chip TiN resonator" Open

J. Corrigan, Benjamin Harpt, Nathan Holman, Rusko Ruskov, Piotr Marciniec , et al. · 2023

This repository contains data reported in the publication "Longitudinal coupling between a Si/SiGe double quantum dot and an off-chip TiN resonator."

Source data for the publication "Longitudinal coupling between a Si/SiGe double quantum dot and an off-chip TiN resonator" Open

J. Corrigan, Benjamin Harpt, Nathan Holman, Rusko Ruskov, Piotr Marciniec , et al. · 2023

This repository contains data reported in the publication "Longitudinal coupling between a Si/SiGe double quantum dot and an off-chip TiN resonator."

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations Open

Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph, Collin C. D. Frink, Robert Joynt , et al. · 2023

Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. …

Quantum Dots on Silicon-on-Insulator (QD/SOI): Nanoscale Strain and Band Structure Engineering (Final Report) Open

M. G. Lagally, M. A. Eriksson, Feng Liu, Francesco Cavallo · 2023

As the project titles indicate, the work focused on Group IV nanomembranes (NMs), thin functional layers, and interfaces, all with one or more dimensions at the nanoscale. The primary focus was discovery driven fundamental science. This ap…

Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells Open

Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci , et al. · 2023

Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challe…

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells Open

Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci , et al. · 2023

Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challe…

Integrating Si/SiGe quantum devices with on-chip classical circuitry Open

DeAnna Campbell, Michael S. Wolfe, Tom Mc junkin, Mark Friesen, M. A. Eriksson , et al. · 2023

Thickness-Dependent Cross-Plane Thermal Conductivity Measurements of Exfoliated Hexagonal Boron Nitride Open

Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe, Takashi Taniguchi, M. G. Lagally , et al. · 2023

Submicrometer-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity and useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. D…

Latched readout for the quantum dot hybrid qubit Open

J. Corrigan, J. P. Dodson, Brandur Thorgrimsson, Samuel F. Neyens, T. J. Knapp , et al. · 2023

A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the exci…

Method for double-sided processing of thin film transistors Open

Hao‐Chih Yuan, Guogong Wang, M. A. Eriksson, Paul G. Evans, M. G. Lagally , et al. · 2023

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backsid…

Front and backside processed thin film electronic devices Open

Paul G. Evans, Max G Lagally, Zhenqiang Ma, Hao‐Chih Yuan, Guogong Wang , et al. · 2023

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and doubl…

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits Open

Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman , et al. · 2022

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the v…

Source data for the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits" Open

Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman , et al. · 2022

<p>This repository contains data reported in the figures of the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits."</p>

Source data for the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits" Open

Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman , et al. · 2022

This repository contains data reported in the figures of the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits."

Integrating Si/SiGe quantum devices with on-chip classical circuitry. Open

DeAnna Campbell, Michael S. Wolfe, Tom McJunkin, Lisa Tracy, M. A. Eriksson · 2022

A Roadmap for Quantum Interconnects Open

D. D. Awschalom, Hannes Bernien, Rex V. Brown, Aashish A. Clerk, Eric Chitambar , et al. · 2022

Created by Q-NEXT, a U.S. Department of Energy (DOE) National Quantum Information Science Research Center, this document is a roadmap for quantum interconnects research and its impact for quantum information science and technology. It is t…

How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces Open

J. P. Dodson, Hamdi Ercan, J. Corrigan, Merritt P. Losert, Nathan Holman , et al. · 2022

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-e…

Toward Robust Autotuning of Noisy Quantum dot Devices Open

Joshua Ziegler, Thomas McJunkin, E. S. Joseph, Sandesh S. Kalantre, Benjamin Harpt , et al. · 2022

The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous sy…

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