M. A. Reshchikov
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View article: Luminescence Properties of Defects in GaN: Solved and Unsolved Problems
Luminescence Properties of Defects in GaN: Solved and Unsolved Problems Open
Gallium Nitride (GaN) is a wide-bandgap semiconductor that has revolutionized optoelectronic applications, enabling blue/white light-emitting devices and high-power electronics. Point defects in GaN strongly influence its optical and elect…
View article: P-type conductivity in GaN:Be epitaxial layers
P-type conductivity in GaN:Be epitaxial layers Open
Electron transport properties of Be-doped heteroepitaxial GaN layers grown by metalorganic vapor phase epitaxy were investigated by means of temperature-dependent Hall effect measurements. The Be concentration was in the range of 4 × 1018−…
View article: Photoluminescence from Defects in Be‐Doped GaN
Photoluminescence from Defects in Be‐Doped GaN Open
While GaN is a crucial semiconductor material for bright light‐emitting devices, fabrication of p‐type GaN remains challenging since the Mg acceptor commonly used for p‐type doping is not shallow enough. Doping of GaN with Be is a promisin…
View article: Passivation of acceptors in GaN by hydrogen and their activation
Passivation of acceptors in GaN by hydrogen and their activation Open
GaN is an important semiconductor for energy-efficient light-emitting devices. Hydrogen plays a crucial role in gallium nitride (GaN) growth and processing. It can form electrically neutral complexes with acceptors during growth, which sig…
View article: Photoluminescence from CdGa and HgGa acceptors in GaN
Photoluminescence from CdGa and HgGa acceptors in GaN Open
Photoluminescence from GaN implanted with Cd or Hg ions was studied and compared with first-principles calculations. In Cd-implanted GaN, the blue band (BLCd) with a maximum at 2.7 eV is attributed to the CdGa acceptor with an ionization e…
View article: Nitrogen vacancy–acceptor complexes in gallium nitride
Nitrogen vacancy–acceptor complexes in gallium nitride Open
We used photoluminescence (PL) spectroscopy and first-principles calculations to investigate GaN doped with Mg, Be, and implanted with Ca. The PL spectra revealed distinct red emission bands (RLA, where A = Be, Mg, and Ca) with maxima betw…
View article: The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN
The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN Open
Photoluminescence (PL) from Be-doped bulk GaN crystals grown by the High Nitrogen Pressure Solution method was studied and compared with PL from GaN:Be layers on sapphire grown by molecular beam epitaxy and metalorganic chemical vapor depo…
View article: Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE
Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE Open
This work presents the diffusion mechanism of zinc in gallium nitride. Halide vapor phase epitaxy layers were deposited on native ammonothermal seeds of three crystallographic orientations: c - (0001), m - (10-10), and a - (11–20). The sur…
View article: Photoluminescence from GaN Implanted with Be and F
Photoluminescence from GaN Implanted with Be and F Open
GaN samples are implanted with Be and F and annealed in different conditions to activate the Be Ga acceptors. Photoluminescence spectra are studied to recognize the defects. The UVL Be band with a maximum at 3.38 eV and the YL Be band with…
View article: Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition Open
A systematic photoluminescence study of Be‐doped GaN grown by metal‐organic chemical vapor deposition is presented. All Be‐doped samples show the ultraviolet luminescence (UVL Be ) band with a maximum at 3.38 eV and the yellow luminescence…
View article: MOCVD Growth and Characterization of Be-Doped GaN
MOCVD Growth and Characterization of Be-Doped GaN Open
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor leve…
View article: Photoluminescence from Vacancy‐Containing Defects in GaN
Photoluminescence from Vacancy‐Containing Defects in GaN Open
Photoluminescence (PL) bands in GaN associated with point defects involving nitrogen or gallium vacancy (V N or V Ga ) are reviewed. The V N ‐containing defects, including the isolated V N and its complexes with acceptors, are often observ…
View article: Fine Structure of the Carbon-Related Blue Luminescence Band in GaN
Fine Structure of the Carbon-Related Blue Luminescence Band in GaN Open
Photoluminescence studies reveal three CN-related luminescence bands in GaN doped with carbon: the YL1 band at 2.17 eV caused by electron transitions via the −/0 level of the CN, the BLC band at 2.85 eV due to transitions via the 0/+ level…
View article: Measurement and analysis of photoluminescence in GaN
Measurement and analysis of photoluminescence in GaN Open
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor properties and identifying point defects. Gallium nitride (GaN) is a remarkable semiconductor material for its use in a new generation of bright white LEDs, b…
View article: Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors
Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors Open
The intensity of defect‐related photoluminescence (PL) in semiconductors changes with temperature, and it usually decreases exponentially above some critical temperature, a process called the PL quenching. Herein, main mechanisms of PL que…
View article: Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry Open
Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) meas…
View article: Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD Open
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template…
View article: Unusual properties of the RY3 center in GaN
Unusual properties of the RY3 center in GaN Open
The investigation and identification of point defects in GaN is crucial for improving the reliability of light-emitting and high-power electronic devices. The RY3 defect with a characteristic emission band at about 1.8 eV is often observed…
View article: Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence Open
Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL…
View article: Hydrogen-carbon complexes and the blue luminescence band in GaN
Hydrogen-carbon complexes and the blue luminescence band in GaN Open
The blue luminescence band with a maximum at 3.0 eV and the zero-phonon line at 3.33 eV (labeled BL2) is observed in high-resistivity GaN. Under prolonged ultraviolet (UV) light exposure, the BL2 band transforms into the yellow luminescenc…