Arkka Bhattacharyya
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View article: Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory
Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory Open
Monoclinic gallium oxide (β-Ga2O3) single crystals have a Raman mode at ∼250 cm−1 that is strongly correlated with free-electron density. Prior work attributed this peak to an electronic excitation of a shallow donor impurity band. However…
View article: Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination
Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination Open
This work reports the fabrication and characterization of a NiOx/β-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV b…
View article: 200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) <b> <i>β</i> </b>-Ga2O3 epitaxial drift layers
200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) <b> <i>β</i> </b>-Ga2O3 epitaxial drift layers Open
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall electron mobilities of up to 2…
View article: NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination Open
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 k…
View article: Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$
Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ Open
In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2$O$_3$ is grown within the same reactor as the $β$-Ga$_2$O$…
View article: Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in <i>β</i>-Ga2O3
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in <i>β</i>-Ga2O3 Open
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, and design. However, the transient equilibration of native defects is difficult to dir…
View article: Record Low Q C V F β-Ga 2 O 3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5V
Record Low Q C V F β-Ga 2 O 3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5V Open
We present a β -Ga 2 O 3 Trench Schottky Barrier Diode (SBD) featuring a high-permittivity (high-k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer the trade-off between forward voltage drop and reverse l…
View article: Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3 Open
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely i…
View article: Erratum: “Ultra-low reverse leakage in large area kilo-volt class <b> <i>β</i> </b>-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. <b>123</b>, 243502 (2023)]
Erratum: “Ultra-low reverse leakage in large area kilo-volt class <b> <i>β</i> </b>-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. <b>123</b>, 243502 (2023)] Open
The original article contains errors in the values of V on for the high-k dielectric RESURF SBDs in Fig. 6(a). 1 The corrected Fig. 6(a) is shown below.
View article: Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates
Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates Open
We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-inch bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measure…
View article: Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates
Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates Open
We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-inch bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measure…
View article: Over 6 $μ$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $β$-Ga$_2$O$_3$ Drift Layers
Over 6 $μ$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $β$-Ga$_2$O$_3$ Drift Layers Open
This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10$^{15}$ cm$^{-3}$) MOCVD-grown thick $β$-Ga$_2$O$_3$ epitaxial drift layers, with thicknesses reaching up to 6.3 $μ$m, using tri…
View article: Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers Open
We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga2O3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga2O3 buffer was grown, fo…
View article: Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers
Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers Open
We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ b…
View article: Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes
Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes Open
We report on vertical β-Ga2O3 power diodes with oxidized-metal Schottky contact (PtOx) and high permittivity (high-κ) dielectric (ZrO2) field plate to improve reverse blocking at both Schottky contact surfaces and edges. The PtOx diodes sh…
View article: Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs
Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs Open
Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critica…
View article: Photoluminescence microscopy as a noninvasive characterization method for defects in gallium oxide and aluminum gallium oxide epitaxial films
Photoluminescence microscopy as a noninvasive characterization method for defects in gallium oxide and aluminum gallium oxide epitaxial films Open
Herein we utilize polarized photoluminescence (PL) microscopy and spectral analysis to locate and characterize many different types of µm-scale extended defects present in melt-grown bulk crystals and metal-organic vapor-phase epitaxy (MOV…
View article: High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup>
High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup> Open
In this letter, fin-shape tri-gate $\\beta$-Ga$_{2}$O$_{3}$ lateral MESFETs\nare demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a\nrecord high for any $\\beta$-Ga$_{2}$O$_{3}$ transistor to date. A\nlow-temperature un…
View article: Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films
Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films Open
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heav…
View article: 4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup>
4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup> Open
β -Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior reverse breakdown voltages ( V BR ) and ON currents ( I DMAX ). A sandwiched SiN x dielectric field plate design is utilized that prevents etching-related …
View article: Spalling‐Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer
Spalling‐Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer Open
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new inte…
View article: Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² Open
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $\beta$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact laye…
View article: High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup>
High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup> Open
This paper presents vertical (001) oriented $\\beta$-Ga$_2$O$_3$ field plated\n(FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric\nfield oxide. A thin drift layer of 1.7 $\\mu m$ was used to enable a\npunch-thro…
View article: Spalling-induced liftoff and transfer of electronic films using a van\n der Waals release layer
Spalling-induced liftoff and transfer of electronic films using a van\n der Waals release layer Open
Heterogeneous integration strategies are increasingly being employed to\nachieve more compact and capable electronics systems for multiple applications\nincluding space, electric vehicles, and wearable and medical devices. To enable\nnew i…
View article: High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$
High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$ Open
This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through (…
View article: N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium
N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium Open
We report on the growth and characterization of Ge-doped β-Ga2O3 thin films using a solid germanium source. β-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition reactor with either an oxygen or a gallium delivery tu…
View article: In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition Open
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alterna…
View article: 130 mA/mm $\beta$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts
130 mA/mm $\beta$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts Open
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $\beta$-Ga$_2$O$_3$ metal-semiconductor field effect transistor (MESFET). The low-temperature (600$^{\circ}$C) heavy (n…
View article: 130 mA/mm $β$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts
130 mA/mm $β$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts Open
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$-Ga$_2$O$_3$ metal-semiconductor field effect transistor (MESFET). The low-temperature (600$^{\circ}$C) heavy (n$^{+…