Chirag Gupta
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View article: Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate
Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate Open
In this work, atomic layer deposition (ALD) TiN is investigated as the Schottky T-gate electrode for scaled Ga-polar AlGaN/GaN high-electron-mobility transistors (HEMTs), and its performance is compared with Ni/Au-gate devices fabricated u…
View article: Demonstration of high Johnson’s figure of merit (<i>f</i> <sub>t</sub> × V<sub>BR</sub> >20 THz·V) and <i>f</i> <sub>max</sub> × V<sub>BR</sub> (>42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates
Demonstration of high Johnson’s figure of merit (<i>f</i> <sub>t</sub> × V<sub>BR</sub> >20 THz·V) and <i>f</i> <sub>max</sub> × V<sub>BR</sub> (>42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates Open
In this paper, a metal-organic chemical vapor deposition (MOCVD) grown Al 0.66 Ga 0.34 N channel metal-insulator-semiconductor-high-electron-mobility-transistor (MISHEMT) with a scaled T-gate structure was fabricated on a single-crystal bu…
View article: Analysis of an Active Aeroelastic Wing using Computational Fluid Dynamics Simulation and XFLR5
Analysis of an Active Aeroelastic Wing using Computational Fluid Dynamics Simulation and XFLR5 Open
In the present study, the optimum wing and its aerodynamic performance investigation of an Active aeroelastic wing (AAW) structure for an unmanned aerial vehicle that operates at low subsonic speed is presented. AAW technology is a new des…
View article: 2 kV Al<sub>0.64</sub>Ga<sub>0.36</sub>N-channel high electron mobility transistors with passivation and field plates
2 kV Al<sub>0.64</sub>Ga<sub>0.36</sub>N-channel high electron mobility transistors with passivation and field plates Open
High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. …
View article: 3 kV monolithic bidirectional GaN HEMT on sapphire
3 kV monolithic bidirectional GaN HEMT on sapphire Open
3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabrica…
View article: 3 kV Monolithic Bidirectional GaN HEMT on Sapphire
3 kV Monolithic Bidirectional GaN HEMT on Sapphire Open
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~2…
View article: High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs Open
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 microns. Breakdown voltage reached >3 kV (tool limit) before …
View article: Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor Open
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization of the deposition conditions such as temperature, V/III ra…
View article: Demonstration of Near‐Size‐Independent External Quantum Efficiency for 368 nm UV Micro‐LEDs
Demonstration of Near‐Size‐Independent External Quantum Efficiency for 368 nm UV Micro‐LEDs Open
UV‐ranged micro‐LEDs are being explored for numerous applications due to their high stability and power efficiency. However, previous reports have shown reduced external quantum efficiency (EQE) and increased leakage current due to the inc…
View article: Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations
Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations Open
High-power operation of high electron mobility transistors (HEMTs) is limited due to a variety of thermal resistances in HEMT devices that cause self-heating effects (SHEs). To reduce SHEs, diamond heat spreaders integrated in the device h…
View article: Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs Open
This paper demonstrates low-resistance and high-transparency p-type contact materials for ultraviolet (UV) micro-light-emitting diodes (LEDs) at 365 nm. As a commonly used p-type LED contact, indium tin oxide (ITO) and nickel/ITO (Ni/ITO) …
View article: Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm<sup>−2</sup>) with device sizes down to 3 μm
Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm<sup>−2</sup>) with device sizes down to 3 μm Open
Ultra-small (10 μ m) InGaN-based red microLEDs (625 nm at 1 A cm −2 ) are necessary for modern displays. However, an increase in surface-area-to-volume ratio with a decrease in the micro-LED size resulting in higher surface recombination c…
View article: Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy Open
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the…
View article: First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD
First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD Open
In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-…
View article: Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)
Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□) Open
In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimization of g…
View article: OrcoDCS: An IoT-Edge Orchestrated Online Deep Compressed Sensing Framework
OrcoDCS: An IoT-Edge Orchestrated Online Deep Compressed Sensing Framework Open
Compressed data aggregation (CDA) over wireless sensor networks (WSNs) is task-specific and subject to environmental changes. However, the existing compressed data aggregation (CDA) frameworks (e.g., compressed sensing-based data aggregati…
View article: Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting Open
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered…
View article: Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance Open
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is reported. Optimization of growth conditions, such as reduced gro…
View article: Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs Open
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V…
View article: Design of Multi Input Converter Topology for Distinct Energy Sources
Design of Multi Input Converter Topology for Distinct Energy Sources Open
Two input energy sources are introduced in the suggested Multi input DC-DC converter topologies. The converters may send power to the load from both the input and output energy sources at the same time. The capacity to execute the buck, bo…
View article: Periyasamy et al. Advances in Aerodynamics CFD and XFLR5 analysis of an Active Aeroelastic Wing
Periyasamy et al. Advances in Aerodynamics CFD and XFLR5 analysis of an Active Aeroelastic Wing Open
In the present study, the optimum wing and its aerodynamic performance investigation of an Active aeroelastic wing (AAW) structure for an unmanned aerial vehicle that operates at low subsonic speed is presented. AAW technology is a new des…
View article: An estimation of long endurance power supply system for a rotary wing unmanned aerial vehicle
An estimation of long endurance power supply system for a rotary wing unmanned aerial vehicle Open
The vast applications of unmanned aerial vehicle (UAV) have made it versatile. However, this battery powered vehicle has a short flight time thereby limiting its performance. Therefore, this paper represents the analysis of two power syste…
View article: Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN Open
The compliant behavior of densely packed 10 × 10 µm2 square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by the low stiffness of the porous GaN under layer. High resolut…
View article: Correlating Hot Deformation Parameters with Microstructure Evolution During Thermomechanical Processing of Inconel 718 Alloy
Correlating Hot Deformation Parameters with Microstructure Evolution During Thermomechanical Processing of Inconel 718 Alloy Open
Hot compression tests were conducted to determine the processing window for deformation of solutionized Inconel 718 over a range of high temperature and strain rate. Hot working map based on the dynamic material model was developed to esta…
View article: Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices
Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices Open
P-n diodes and metal-oxide-semiconductor-capacitors (MOSCAPs) are integral parts of vertical GaN power MOSFETs. The voltage in the off-state in trench MOSFETs is held by the p-n junction (source-drain) and the MOSCAP (gate-drain). Although…
View article: NEW INITIATIVE OF UNMANNED AERIAL VEHICLE (UAV) EMERGING TECHNOLOGY APPLICATIONS IN NORTH EAST FOR CAPACITY BUILDING AND OUTREACH ACTIVITIES OF NORTH EASTERN SPACE APPLICATIONS CENTRE
NEW INITIATIVE OF UNMANNED AERIAL VEHICLE (UAV) EMERGING TECHNOLOGY APPLICATIONS IN NORTH EAST FOR CAPACITY BUILDING AND OUTREACH ACTIVITIES OF NORTH EASTERN SPACE APPLICATIONS CENTRE Open
Unmanned Aerial Vehicle (UAV) technology is revolutionizing and acting as an alternative for many of remote sensing applications, particularly for very high resolution satellite requirements, considering easy of flying in the areas of pers…
View article: In-situ Oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
In-situ Oxide, GaN interlayer based vertical trench MOSFET (OG-FET) Open
The surge in world-wide energy consumption places a growing need for highly efficient power electronics for generation, transportation, and utilization of electricity. With the advent of new markets such as electric vehicles, PV solar inve…
View article: Maskless regrowth of GaN for trenched devices by MOCVD
Maskless regrowth of GaN for trenched devices by MOCVD Open
Blanket regrowth studies were performed on GaN trenches with varying widths and optimized for two types of devices—those that required the profile of the trench to be maintained and those that required the complete filling of trenches, i.e…