M. Gabás
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View article: Experimental optical and structural properties of ZnS, MgF2, Ta2O5, Al2O3 and TiO2 deposited by electron beam evaporation for optimum anti-reflective coating designs
Experimental optical and structural properties of ZnS, MgF2, Ta2O5, Al2O3 and TiO2 deposited by electron beam evaporation for optimum anti-reflective coating designs Open
MgF2, ZnS, Ta2O5, Al2O3 and TiO2 are some of the most common dielectric materials actually used in solar cells as anti-reflective coatings. For such purpose, they have been deposited by electron beam evaporation, which is one of the prefer…
View article: Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE Open
This work presents an investigation of the fully strained GaAsN/GaAs heterostructures obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the analysis of the strain generated in the GaAsN epilayers and its correl…
View article: Evidence of Decreased Optical Absorption of Chemical Vapor Deposition Graphene Multilayers Deposited on Semiconductor Structures
Evidence of Decreased Optical Absorption of Chemical Vapor Deposition Graphene Multilayers Deposited on Semiconductor Structures Open
Graphene absorption has a widely accepted theoretical value of 2.3% for a freestanding single layer in a wide spectral range that covers the visible spectrum. This value is also oftentimes assumed when graphene films are part of more compl…
View article: Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers
Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers Open
Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. Ga…
View article: Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells
Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells Open
The optical properties of p-type, n-type and nominally undoped (AlxGa1_x)yIn1_yP layers have been determined in a wide spectral range. The layers under study have been chosen with compositions and dopant concentrations which make them inte…
View article: Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells
Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells Open
Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown sa…
View article: Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests
Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests Open
Accelerated life tests are frequently used to provide reliability information in a moderate period of time (weeks or months), and after that, a failure analysis is compulsory to detect the failure origins. In this paper, a failure analysis…
View article: Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications
Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications Open
Recent advances on the development of a 4J latticematched dilute nitride solar cell for terrestrial and space applications are described. Modeling of the solar cell is carried out using a drift-diffusion model and material parameters extra…
View article: Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates
Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates Open
Technology Computer Aided Design modeling is used to examine the performance under light concentration of a 4-J solar cell Ge-based that includes a 1-eV MBE-grown dilute nitride subcell. The 1-eV solar cell is modeled and examined by using…