M. Guziewicz
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View article: PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature Open
An impact of thin metallic ZrN layers on Si and sapphire wafers on substrate temperature during MBE growth of GaN nanowires is studied. Using nucleation kinetics of GaN as a sensitive probe we show that a thin ZrN layer strongly increases …
View article: Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres
Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres Open
The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide …
View article: Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy
Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy Open
Effects of aluminum (Al) and nitrogen (N) implantation performed at room and at elevated (500 °C) temperatures on epitaxial n-type 4H polytype silicon carbide as well as post-implantation annealing have been studied by Raman scattering spe…
View article: Characterization of (Cd,Mn)Te and (Cd,Mg)Te single crystals in the THz frequency range using integrated photoconductive and electro-optic effects
Characterization of (Cd,Mn)Te and (Cd,Mg)Te single crystals in the THz frequency range using integrated photoconductive and electro-optic effects Open
We present THz frequency range characterization of highly resistive (Cd,Mg)Te and (Cd,Mn)Te single crystals, using an "experiment-on-chip" configuration. We have demonstrated that both of these single crystals exhibit simultaneously strong…
View article: Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration
Photoconductive and electro-optic effects in (Cd,Mg)Te single crystals measured in an experiment-on-chip configuration Open
We present our studies on both photoconductive (PC) and electro-optic (EO) responses of (Cd,Mg)Te single crystals. In an In-doped Cd0.92Mg0.08Te single crystal, subpicosecond electrical pulses were optically generated via a PC effect, coup…
View article: Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures Open
The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO 2 buffer layer on the electrical properties of …
View article: Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator
Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator Open
The topological crystalline insulator tin telluride is known to host\nsuperconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low\nindium contents ($x=0.04$) it is known that the topological surface states are\npreserved. …