M. Ichimura
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View article: Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n‐Type FeS<sub><i>x</i></sub>O<sub><i>y</i></sub> for Homostructure Solar Cell
Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n‐Type FeS<sub><i>x</i></sub>O<sub><i>y</i></sub> for Homostructure Solar Cell Open
A chemical bath deposition (CBD) is applied to deposit n‐type iron sulfide (FeS x O y ) film on fluorine (F)‐doped tin oxide (SnO 2 )–FTO substrate. The duration, temperature, and magnetic stirrer's speed in CBD are 3 h, 75 °C, and 100 rev…
View article: Drop–Dry Deposition of SnO2 Using Na2SnO3 and Fabrication of SnO2/NiO Transparent Solar Cells
Drop–Dry Deposition of SnO2 Using Na2SnO3 and Fabrication of SnO2/NiO Transparent Solar Cells Open
In this work, SnO 2 thin films are deposited by drop–dry deposition (DDD), which is a simple, low-cost chemical technique for thin film deposition. The deposition solution contains Na 2 SnO 3 as the Sn source, and is highly stable without …
View article: Dip-dry deposition of semiconducting aluminum oxide-hydroxide thin films
Dip-dry deposition of semiconducting aluminum oxide-hydroxide thin films Open
Aluminum oxide-hydroxide thin films are fabricated by a simple chemical process, dip-dry deposition. The substrate is dipped in the solution and then dried on a heater plate. The dip-dry cycles are repeated to obtain necessary thickness. T…
View article: Theoretical Study of Doping in GaOOH for Electronics Applications
Theoretical Study of Doping in GaOOH for Electronics Applications Open
GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga2O3. To examine the possibility of valence control and a…
View article: Drop-Dry Deposition of SnO2 Using a Complexing Agent and Fabrication of Heterojunctions with Co3O4
Drop-Dry Deposition of SnO2 Using a Complexing Agent and Fabrication of Heterojunctions with Co3O4 Open
The drop-dry deposition (DDD) is a simple chemical technique of thin film deposition, which can be applied to metal oxides. The deposition solution is an aqueous solution including a metal salt and an alkali. However, some metal ions react…
View article: Low temperature processed CO<sub>2</sub> laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
Low temperature processed CO<sub>2</sub> laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors Open
Owing to its wide bandgap (3.4 eV) and high electron mobility, GaN has attracted significant attention for applications in solar cells, power transistors, and high-electron-mobility transistors. Crystallized GaN thin film can be hardly pre…
View article: Drop–Dry Deposition of Ni(OH)2 Precursors for Fabrication of NiO Thin Films
Drop–Dry Deposition of Ni(OH)2 Precursors for Fabrication of NiO Thin Films Open
Drop–dry deposition (DDD) is a method of depositing thin films by heating and drying the deposition solution dropped on a substrate. We prepared Ni(OH)2 precursor thin films by DDD and annealed them in air to prepare NiO thin films. The ap…
View article: Study of detached plasma profile in the divertor simulation experimental module of tandem mirror GAMMA 10/PDX
Study of detached plasma profile in the divertor simulation experimental module of tandem mirror GAMMA 10/PDX Open
A divertor simulation experimental module (D-module) in the tandem mirror GAMMA 10/PDX was used for the study of plasma detachment. In previous studies, it was difficult to measure far-upstream plasma parameters in the D-module, and only e…
View article: Calculation of Band Offsets of Mg(OH)2-Based Heterostructures
Calculation of Band Offsets of Mg(OH)2-Based Heterostructures Open
The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained …
View article: Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition
Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition Open
Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing …
View article: Fabrication of transparent ZnO/(CuZn)O heterojunction solar cells by electrochemical deposition
Fabrication of transparent ZnO/(CuZn)O heterojunction solar cells by electrochemical deposition Open
Transparent (CuZn)O thin films were fabricated via electrochemical deposition at room temperature from an aqueous solution containing Zn(NO 3 ) 2 and Cu(NO 3 ) 2 , and properties of the films were studied before and after annealing at 400 …
View article: Impurity Doping in Mg(OH)2 for n-Type and p-Type Conductivity Control
Impurity Doping in Mg(OH)2 for n-Type and p-Type Conductivity Control Open
Magnesium hydroxide (Mg(OH)2) has a wide bandgap of about 5.7 eV and is usually considered an insulator. In this study, the energy levels of impurities introduced into Mg(OH)2 are predicted by first-principles calculations. A supercell of …
View article: Impact of additional plasma heating on detached plasma formation in divertor simulation experiments using the GAMMA 10/PDX tandem mirror
Impact of additional plasma heating on detached plasma formation in divertor simulation experiments using the GAMMA 10/PDX tandem mirror Open
The transition of a detached to attached plasma experiment has been performed in GAMMA 10/PDX by applying an additional plasma heating pulse of electron cyclotron heating (ECH). In a plasma detachment experiment, a short pulse (25 ms) of E…
View article: Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions
Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions Open
We carried out carrier lifetime measurements for 4H-SiC single crystals in aqueous solutions with various pH by the microwave photoconductivity decay method. For both n- and p-type 4H-SiC, carrier lifetimes measured by Si-face excitation w…
View article: Multi-point measurement using two-channel reflectometer with antenna switching for study of high-frequency fluctuations in GAMMA 10
Multi-point measurement using two-channel reflectometer with antenna switching for study of high-frequency fluctuations in GAMMA 10 Open
A two-channel microwave reflectometer system with fast microwave antenna switching capability was developed and applied to the GAMMA 10 tandem mirror device to study high-frequency small-amplitude fluctuations in a hot mirror plasma. The f…
View article: Structural studies of ZnO nanostructures by varying the deposition parameters
Structural studies of ZnO nanostructures by varying the deposition parameters Open
The effect of Zinc Oxide (ZnO) thin film on the growth of ZnO nanorods (NRs) was investigated. The structures of ZnO NRs were synthesized by chemical bath deposition (CBD) method in aqueous solution of N2O6Zn.6H2O and C6H12N4 at 90°C of de…
View article: Deposition of p-type wide-gapsemiconductor CuxZnyS
Deposition of p-type wide-gapsemiconductor CuxZnyS Open
CuxZnyS thin films were deposited by two chemical methods, i.e., electrochemical deposition and photochemical deposition.CuxZnyS shows p-type conductivity when the Cu content in the film is larger than 1 %, and it has a wide bandgap (> 3eV…
View article: Development of internal ICRF wave detection using microwave reflectometry on GAMMA 10
Development of internal ICRF wave detection using microwave reflectometry on GAMMA 10 Open
The microwave reflectometer system in the GAMMA 10 central cell has been recently upgraded using PIN diode switches and an axial array of transmitting and receiving horn antennas to investigate internal structures of ICRF waves. The system…
View article: ICRF heating in the plug/barrier region to control end-loss ions on GAMMA 10/PDX
ICRF heating in the plug/barrier region to control end-loss ions on GAMMA 10/PDX Open
On the GAMMA 10/PDX tandem mirror machine, divertor simulation experiments are carried out in the west end region by utilizing the particle flux from the confinement region. In order to control the particle flux and the ion temperature on …
View article: Effects of Tartaric Acid on Electrochemical Deposition of SnS in ZnO/SnS Heterostructures
Effects of Tartaric Acid on Electrochemical Deposition of SnS in ZnO/SnS Heterostructures Open
ZnO/SnS heterostructures were fabricated by electrochemical deposition (ECD) for application to solar cells. SnS was deposited by three-step pulse ECD from a solution containing 100 mM Na2S2O3 and 30 mM SnSO4. To improve the film propertie…
View article: Characteristics of SMBI fueling with laval nozzle in GAMMA 10 based on experimental and simulation results
Characteristics of SMBI fueling with laval nozzle in GAMMA 10 based on experimental and simulation results Open
Results of supersonic molecular bean injection (SMBI) with Laval nozzle has been carried out in the GAMMA 10 tandem mirror. The neutral transport during SMBI was investigated by the two-dimensional image of the light emission captured by t…
View article: Effects of annealing on properties of electrochemically deposited Cu<sub>x</sub>Zn<sub>y</sub>S thin films
Effects of annealing on properties of electrochemically deposited Cu<sub>x</sub>Zn<sub>y</sub>S thin films Open
Zn-rich CuxZnyS is a transparent p-type semiconductor. In this study, we fabricated CuxZnyS thin films by electrochemical deposition and investigated changes in properties due to annealing in a sulfur atmosphere. The sample before annealin…