M. Karner
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View article: TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs
TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs Open
International audience
View article: Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling
Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling Open
Using a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner - and outer-gates in gate-all-around nanosheet FETs. Trade-off between short-channel effects (SSAT), external resistanc…
View article: A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence Open
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that r…
View article: FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation
FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation Open
International audience
View article: Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines
Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines Open
Advancements in the semiconductor industry introduce novel channel materials, device structures, and integration methods, leading to intricate physics challenges when characterizing devices at circuit level. Nevertheless, accurate models f…
View article: Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation
Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation Open
We present a novel approach to the modeling of carrier energy relaxation during high-field phases in semiconductor-oxide-nitride-oxide-semiconductor (SONOS) flash memory gate stacks. We show that this method integrates well with TCAD simul…
View article: Modeling the Operation of Charge Trap Flash Memory—Part II: Understanding the ISPP Curve With a Semianalytical Model
Modeling the Operation of Charge Trap Flash Memory—Part II: Understanding the ISPP Curve With a Semianalytical Model Open
Flash memory with a charge trap layer (CTL), also known as silicon-oxide-nitride-oxide-silicon (SONOS), is the most common type in production, yet there is a lack of consensus on the physical modeling of its operation. In Part I, we theref…
View article: Effect of Mask Geometry Variation on Plasma Etching Profiles
Effect of Mask Geometry Variation on Plasma Etching Profiles Open
It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room a…
View article: Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide Bandgap, and High-Voltage Applications
Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide Bandgap, and High-Voltage Applications Open
We present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion (DD) equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stability is achi…
View article: Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications
Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications Open
In this preprint we present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stabi…
View article: DTCO flow for air spacer generation and its impact on power and performance at N7
DTCO flow for air spacer generation and its impact on power and performance at N7 Open
A novel DTCO flow is described with the principal aim to study the impact of air spacer fabrication on the power and performance of a 5-stage inverter ring oscillator at the 7 nm node. The flow incorporates physical and analytical process …
View article: Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications
Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications Open
In this preprint we present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stabi…
View article: Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications
Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications Open
In this preprint we present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stabi…
View article: On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment
On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment Open
sponsorship: This work was supported in part by the Austrian Research Promotion Agency (FFG) Bridge Grant 867997 TCAD-NCFET and in part by the Project FVLLMONTI funded by the European Union's Horizon 2020 Research and Innovation Program un…
View article: Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence Open
This paper presents the set of simulation means used to develop the concept of N2C2 (neural network compute cube) based on a vertical transistor technology platform. On the basis of state-of-the-art junctionless nanowire transistors (JLNT)…
View article: Nano Device Simulator—A Practical Subband-BTE Solver for Path-Finding and DTCO
Nano Device Simulator—A Practical Subband-BTE Solver for Path-Finding and DTCO Open
We present an in-depth discussion on the subband Boltzmann transport (SBTE) methodology, its evolution, and its application to the simulation of nanoscale MOSFETs. The evolution of the method is presented from the point of view of developi…