Patrick M. Lenahan
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View article: All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500°C Using SiC Devices
All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500°C Using SiC Devices Open
Silicon Carbide (SiC) is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance (ODMR) in SiC has been widely stu…
View article: All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500 °C Using SiC Devices
All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500 °C Using SiC Devices Open
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for magn…
View article: Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications
Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications Open
The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in …
View article: Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices
Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices Open
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/S…
View article: Inorganic-polymer-derived dielectric films
Inorganic-polymer-derived dielectric films Open
A method of coating a substrate with a thin film of a polymer of predetermined porosity comprises depositing the thin film on the substrate from a non-gelled solution comprising at least one hydrolyzable metal alkoxide of a polymeric netwo…
View article: Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO<sub>2</sub> MOSFETs (June 2022)
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO<sub>2</sub> MOSFETs (June 2022) Open
Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically…
View article: A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance Open
Here, we utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO2 metal–oxide–silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected us…
View article: Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors Open
Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly impo…
View article: Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System.
Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System. Open
NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation …
View article: Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.
Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors. Open
reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.
View article: Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR.
Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR. Open
NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation …
View article: Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs.
Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs. Open
EDMR response in high-field stressing is much weaker than in the gamma irradiation case. These results likely suggest a difference in their physical distribution resulting from radiation damage and high electric field stressing.
View article: A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping
A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping Open
We discuss a new technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor (MOSFET) channel/gate dielectric interface. We call this technique near zero field spin-dependent charge pumping …
View article: Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation
Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation Open
We report on a method by which we can systematically extract spectroscopic information such as isotropic electron–nuclear hyperfine coupling constants from near-zero field magnetoresistance (NZFMR) spectra. The method utilizes a least squa…
View article: Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface Open
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techni…
View article: Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels
Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels Open
The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially …
View article: Total Ionizing Dose Effects on TiN/Ti/HfO<sub>2</sub>/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance
Total Ionizing Dose Effects on TiN/Ti/HfO<sub>2</sub>/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance Open
We observe a gamma-irradiation induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO2/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects which are directly …
View article: Erratum: Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide
Erratum: Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide Open
Scientific Reports 6: Article number: 37077; published online: 28 November 2016 updated: 16 January 2017. This Article contains a typographical error. In the Results section, under the subheading “SiC Sensor” “These intermediate coupled pa…
View article: Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide
Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide Open
Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven perfor…