M. Mikulics
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View article: Correlative Raman Spectroscopy–SEM Investigations of Sintered Magnesium–Calcium Alloys for Biomedical Applications
Correlative Raman Spectroscopy–SEM Investigations of Sintered Magnesium–Calcium Alloys for Biomedical Applications Open
In this study, a correlative approach using Raman spectroscopy and scanning electron microscopy (SEM) is introduced to meet the challenges of identifying impurities, especially carbon-related compounds in metal injection-molded (MIM) Mg-0.…
View article: Towards Correlative Raman Spectroscopy–STEM Investigations Performed on a Magnesium–Silver Alloy FIB Lamella
Towards Correlative Raman Spectroscopy–STEM Investigations Performed on a Magnesium–Silver Alloy FIB Lamella Open
In this study, a lamella prepared using focused ion beam (FIB) milling from a magnesium–silver alloy wire was investigated. The wire, intended for biomedical applications, was initially degraded in simulated body fluid (SBF) under physiolo…
View article: Laser-Micro-Annealing of Microcrystalline Ni-Rich NCM Oxide: Towards Micro-Cathodes Integrated on Polyethylene Terephthalate Flexible Substrates
Laser-Micro-Annealing of Microcrystalline Ni-Rich NCM Oxide: Towards Micro-Cathodes Integrated on Polyethylene Terephthalate Flexible Substrates Open
Here in this work, we report on micro-Raman spectroscopy investigations performed on freestanding Ni-rich NCM (LixNi0.83Co0.11Mn0.06O2) microcrystals transferred to flexible polyethylene terephthalate (PET) host substrates. This technologi…
View article: Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator Open
The RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respecti…
View article: THz generation by exchange-coupled spintronic emitters
THz generation by exchange-coupled spintronic emitters Open
The mechanism of THz generation in ferromagnet/metal (F/M) bilayers has been typically ascribed to the inverse spin Hall effect (ISHE). Here, we fabricated Pt/Fe/Cr/Fe/Pt multilayers containing two back-to-back spintronic THz emitters sepa…
View article: Developments in Mask-Free Singularly Addressable Nano-LED Lithography
Developments in Mask-Free Singularly Addressable Nano-LED Lithography Open
LED devices are increasingly gaining importance in lithography approaches due to the fact that they can be used flexibly for mask-less patterning. In this study, we briefly report on developments in mask-free lithography approaches based o…
View article: Laser-triggered terahertz radiation from interlayer exchange-coupled spintronic emitters
Laser-triggered terahertz radiation from interlayer exchange-coupled spintronic emitters Open
Intensity of THz transients triggered by laser excitation in NM/FM/NM/FM/NM multilayers (FM - ferromagnet, NM - normal metal) can be tuned by the interlayer exchange coupling between the two FM layers. We ascribe this tunability to the con…
View article: Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy
Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy Open
The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should …
View article: Transient THz Emission and Effective Mass Determination in Highly Resistive GaAs Crystals Excited by Femtosecond Optical Pulses
Transient THz Emission and Effective Mass Determination in Highly Resistive GaAs Crystals Excited by Femtosecond Optical Pulses Open
We present comprehensive studies on the emission of broadband, free-space THz transients from several highly resistive GaAs samples excited by femtosecond optical pulses. Our test samples are characterized by different degrees of disorder,…
View article: Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations
Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations Open
We present a device driving testing platform based on vertically integrated nano light emitting diodes (nano-LEDs). The nano-LEDs with a peak wavelength emission centered at ∼ 445 nm were arranged in arrays and conditioned using a laser-mi…
View article: Cutting-edge nano-LED technology
Cutting-edge nano-LED technology Open
In this Perspective, we will introduce possible future developments on group III-nitride nano-LEDs, which are based on current achievements in this rapidly arising research-technological field. First, the challenges facing their fabricatio…
View article: Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer Open
We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measu…
View article: Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement Open
A local so-called laser-micro-annealing (LMA) conditioning technology, which is suitable for the fabrication of a large range of hybrid nano-optoelectronic devices, was applied to III-nitride-based nano-light emitting diodes (LEDs). The LE…
View article: Proximity‐Effect‐Induced Superconductivity in Nb/Sb<sub>2</sub>Te<sub>3</sub>‐Nanoribbon/Nb Junctions
Proximity‐Effect‐Induced Superconductivity in Nb/Sb<sub>2</sub>Te<sub>3</sub>‐Nanoribbon/Nb Junctions Open
Nanohybrid superconducting junctions using antimony telluride (Sb 2 Te 3 ) topological insulator nanoribbons and Nb superconducting electrodes are fabricated using electron beam lithography and magnetron sputtering. The effects of bias cur…
View article: Nano-LED induced chemical reactions for structuring processes
Nano-LED induced chemical reactions for structuring processes Open
We present a structuring technique based on the initialization of chemical reactions by an array of nano-LEDs which is used in the near-field as well as in the far-field regime.
View article: Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics Open
Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence …
View article: Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes Open
We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven InGaN/GaN nano-LEDs as the primary e…
View article: Tuning of fluorine content in graphene: towards large-scale production of stoichiometric fluorographene
Tuning of fluorine content in graphene: towards large-scale production of stoichiometric fluorographene Open
The availability of well-defined modified graphene derivatives such as fluorographene, graphane, thiographene or hydroxygraphene is of pivotal importance for tuning the resulting material properties in numerous potential applications. A se…