M. Ohnemus
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View article: Rear-junction n-type cell concept utilizing PERC process sequence on epitaxially-grown base and emitter
Rear-junction n-type cell concept utilizing PERC process sequence on epitaxially-grown base and emitter Open
PERC is the most common cell type in today’s fabrication of crystalline Si solar cells. However, the cell design is often limited by the compromise for the front side between lateral conductivity, contact resistivity and recombination. In …
View article: Simultaneous Boron Emitter Diffusion and Annealing of Tunnel Oxide Passivated Contacts Via Rapid Vapor-Phase Direct Doping
Simultaneous Boron Emitter Diffusion and Annealing of Tunnel Oxide Passivated Contacts Via Rapid Vapor-Phase Direct Doping Open
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View article: Kerfless Wafering Approach with Si and Ge Templates for Si, Ge and III-V Epitaxy
Kerfless Wafering Approach with Si and Ge Templates for Si, Ge and III-V Epitaxy Open
We work on the transfer from CZ wafers to epitaxially grown Si and Ge wafers on reusable substrates with a porous detachment layer (“kerfless wafering”) to reduce material and energy consumption. We report on our progress of applying the k…
View article: Simultaneous Boron Emitter Diffusion and Crystallization of TOPCon Layers via Rapid Vapour-Phase Direct Doping
Simultaneous Boron Emitter Diffusion and Crystallization of TOPCon Layers via Rapid Vapour-Phase Direct Doping Open
The alternative boron emitter diffusion process rapid vapour phase direct doping (B-RVD) is applied to n-type silicon wafers with tunnel oxide passivated contact (TOPCon) rear sides. A variation of the B-RVD process parameters led to an in…