Marianna Pantouvaki
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View article: Mosaic: Breaking the Optics versus Copper Trade-off with a Wide-and-Slow Architecture and MicroLEDs
Mosaic: Breaking the Optics versus Copper Trade-off with a Wide-and-Slow Architecture and MicroLEDs Open
View article: Low-loss phase modulation using a MoS<sub>2</sub> monolayer integrated on silicon waveguides
Low-loss phase modulation using a MoS<sub>2</sub> monolayer integrated on silicon waveguides Open
Two dimensional (2D) materials are at the forefront of research in integrated modulators. However, achieving pure phase modulation with low insertion loss remains challenging in 2D material modulators. This work explores phase modulators b…
View article: Graphene absorber on an SOI chip for active and passive mode locking of lasers
Graphene absorber on an SOI chip for active and passive mode locking of lasers Open
View article: 64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform
64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform Open
We report the recent progress of waveguide-coupled O-band GeSi quantum confined stark effect electroabsorption modulators, monolithically integrated in a Si photonics platform on 300 mm Silicon-on-insulator wafers with 220 nm thick Si top …
View article: Graphene Phase Modulators Operating in the Transparency Regime
Graphene Phase Modulators Operating in the Transparency Regime Open
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimizing the number of…
View article: Silicon integrated photonic-electronic neuron for noise-resilient deep learning
Silicon integrated photonic-electronic neuron for noise-resilient deep learning Open
This paper presents an experimental demonstration of the photonic segment of a photonic-electronic multiply accumulate neuron (PEMAN) architecture, employing a silicon photonic chip with high-speed electro-absorption modulators for matrix-…
View article: Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators
Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators Open
Since their first demonstration, graphene-based silicon waveguide modulators have evolved towards very attractive devices for adoption in future optical interconnects. In this paper, we first review state-of-the-art for graphene-based inte…
View article: Scaling Photonic Neural Networks: A Silicon Photonic GeMM Leveraging a Time-space Multiplexed Xbar
Scaling Photonic Neural Networks: A Silicon Photonic GeMM Leveraging a Time-space Multiplexed Xbar Open
We demonstrate experimentally a novel 8×8 AWGR-based photonic matrix multiplier that enables simultaneously time-, wavelength- and space- division multiplexed computing with a computational power of 1.28 TeraFLOP.
View article: Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer
Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer Open
We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase select…
View article: Graphene phase modulators operating in the transparency regime
Graphene phase modulators operating in the transparency regime Open
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of…
View article: Active and passive mode-locking of a laser using a graphene modulator on an SOI chip
Active and passive mode-locking of a laser using a graphene modulator on an SOI chip Open
This study experimentally demonstrates the ability of an integrated graphene modulator on a silicon-on-insulator chip to both passively and actively mode-lock a fibre laser. Passive mode-locking is demonstrated at a repetition rate of 28 M…
View article: High-efficiency dual single layer graphene modulator integrated on slot waveguides
High-efficiency dual single layer graphene modulator integrated on slot waveguides Open
This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impre…
View article: GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Open
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world [1,2,3,4,5,6]. However, the lack of highly scalable, native CMOS-integrated light sources is one of th…
View article: GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Open
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
View article: Wafer‐Scale Integration of Single Layer Graphene Electro‐Absorption Modulators in a 300 mm CMOS Pilot Line
Wafer‐Scale Integration of Single Layer Graphene Electro‐Absorption Modulators in a 300 mm CMOS Pilot Line Open
Graphene‐based devices have shown great promise for several applications. For graphene devices to be used in real‐world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a pa…
View article: Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform
Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform Open
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a pa…
View article: Saturable absorption of a double layer graphene modulator on a slot waveguide
Saturable absorption of a double layer graphene modulator on a slot waveguide Open
The saturable absorption of a double-layer graphene modulator is experimentally demonstrated on a silicon slot waveguide platform. Saturation was found to start at ~0.8W with a maximum saturation depth of 1.9 dB for a 50μm
View article: Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering Open
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. …
View article: Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision
Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision Open
InP DFB lasers are flip-chip bonded to 300 mm Si photonic wafers using a pick-and-place tool with an advanced vision system, realizing high-precision and high-throughput passive assembly. By careful co-design of the InP-Si Photonics electr…
View article: Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer
Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer Open
We present a loss-coupled distributed feedback microlaser, monolithically grown on a standard 300-mm Si wafer using nano-ridge engineering. The cavity is formed by integrating a metallic grating on top of the nano-ridge. This allows formin…
View article: 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators Open
Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger tempe…
View article: Efficient Resonance Management in Ultrahigh‐<i>Q</i> 1D Photonic Crystal Nanocavities Fabricated on 300 mm SOI CMOS Platform
Efficient Resonance Management in Ultrahigh‐<i>Q</i> 1D Photonic Crystal Nanocavities Fabricated on 300 mm SOI CMOS Platform Open
Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for developing novel resonance‐based photonic integrated circuits (PICs). Here …
View article: 0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer
0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer Open
We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA ( 1.36×10−7A/cm2 ) at −1 V bias and internal responsivities …
View article: 2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators Open
Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene based EA modulators promise smaller footprints, larger tempe…
View article: Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform
Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform Open
Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). He…
View article: Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si Open
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser dio…
View article: High speed graphene-silicon electro-absorption modulators for the O-band and C-band
High speed graphene-silicon electro-absorption modulators for the O-band and C-band Open
In the past few years, graphene has drawn interest for applications in optoelectronic devices. Due to its extraordinary properties, i.e. wide optical bandwidth, tunable absorption, high carrier mobility, and CMOS compatibility, it is a can…
View article: Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates
Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates Open
The monolithic growth of III–V materials directly on Si substrates provides a promising integration approach for passive and active silicon photonic integrated circuits but still faces great challenges in crystal quality due to misfit defe…
View article: 5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators
5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators Open
Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable…
View article: Highly Sensitive 56 Gbps NRZ O-band BiCMOS-Silicon Photonics Receiver using a Ge/Si Avalanche Photodiode
Highly Sensitive 56 Gbps NRZ O-band BiCMOS-Silicon Photonics Receiver using a Ge/Si Avalanche Photodiode Open
A hybrid BiCMOS-Silicon Photonics receiver with a waveguide-coupled Ge/Si avalanche photodiode is demonstrated with OMA sensitivities of −14.4dBm for error-free operation at 50 Gbps and -18.6 dBm under the KP4-FEC limit at 56 Gbps NRZ-OOK.