M. Schmidbauer
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View article: Broadband light emission from GaAsP and GaInP islands grown on silicon nanotip wafer via nanoheteroepitaxy
Broadband light emission from GaAsP and GaInP islands grown on silicon nanotip wafer via nanoheteroepitaxy Open
We present the monolithic integration of GaAsxP1−x and GaxIn1−xP islands, selectively grown on a Si(001) nanotip wafer using gas-source molecular-beam epitaxy via a nanoheteroepitaxy approach. Optimal growth temperatures balancing selectiv…
View article: Characterization of strain effects on structure, surface morphology, and band gap of MOVPE grown β-Ga2O3 thin films on β-(AlxGa1-x)2O3 substrates
Characterization of strain effects on structure, surface morphology, and band gap of MOVPE grown β-Ga2O3 thin films on β-(AlxGa1-x)2O3 substrates Open
β-Ga2O3 thin films (~ 83 nm) were grown on β-(AlₓGa1-x)2O₃ (x = 0.1, 0.15, 0.2) (100) substrates via metal-organic vapor phase epitaxy (MOVPE) and characterized by high resolution x-ray diffraction (HR-XRD), atomic force microscopy (AFM) a…
View article: Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer
Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer Open
In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide elec…
View article: Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE
Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE Open
The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular b…
View article: Periodic lateral superlattice in bonded SrTiO3/SrTiO3 twisted perovskites
Periodic lateral superlattice in bonded SrTiO3/SrTiO3 twisted perovskites Open
Stacking of freestanding membranes enables the formation of interfaces beyond what can be obtained with classical heteroepitaxy. In particular, twisted interfaces provide unique physical properties not existent in the corresponding individ…
View article: Luminescence properties of ZnSe single crystals co-doped with Fe and Cr
Luminescence properties of ZnSe single crystals co-doped with Fe and Cr Open
The luminescence properties of two co-doped ZnSe:(Cr, Fe) single crystals, grown by the Bridgman method, have been studied using photoluminescence techniques. Structural characterization by high-resolution X-ray diffraction (HR-XRD), elect…
View article: Controlled integration of InP nanoislands with CMOS-compatible Si using nanoheteroepitaxy approach
Controlled integration of InP nanoislands with CMOS-compatible Si using nanoheteroepitaxy approach Open
Indium phosphide (InP) nanoislands are grown on pre-patterned Silicon (001) nanotip substrate using gas-source molecular-beam epitaxy via nanoheteroepitaxy approach. The study explores the critical role of growth temperature in achieving s…
View article: ZnSe:(Cr,Fe) laser crystal matrices: Challenges related to doping
ZnSe:(Cr,Fe) laser crystal matrices: Challenges related to doping Open
We investigate co-doped ZnSe: (Cr, Fe) laser crystals with an approach that includes both optical spectroscopy and theoretical modelling. We found that concentrations of chromium and iron up to 1018 cm−3 are optimal for obtaining a homogen…
View article: Dielectric function and interband critical points of compressively strained ferroelectric K<sub>0.85</sub>Na<sub>0.15</sub>NbO<sub>3</sub> thin film with monoclinic and orthorhombic symmetry
Dielectric function and interband critical points of compressively strained ferroelectric K<sub>0.85</sub>Na<sub>0.15</sub>NbO<sub>3</sub> thin film with monoclinic and orthorhombic symmetry Open
The dielectric function and interband critical points of compressively strained ferroelectric K 0.85 Na 0.15 NbO 3 thin film grown by metal-organic vapor phase epitaxy (MOVPE) are studied in broad spectral and temperature ranges by spectro…
View article: Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy
Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy Open
Gallium phosphide (GaP) is a III–V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silic…
View article: Electronic Synapses Enabled by an Epitaxial SrTiO<sub>3‐δ</sub> / Hf<sub>0.5</sub>Z<sub>r0.5</sub>O<sub>2</sub> Ferroelectric Field‐Effect Memristor Integrated on Silicon
Electronic Synapses Enabled by an Epitaxial SrTiO<sub>3‐δ</sub> / Hf<sub>0.5</sub>Z<sub>r0.5</sub>O<sub>2</sub> Ferroelectric Field‐Effect Memristor Integrated on Silicon Open
Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high‐performance, energy‐efficien…
View article: Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer
Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer Open
The integration of both optical and electronic components on a single chip, despite several challenges, holds the promise of compatibility with complementary metal-oxide semiconductor (CMOS) technology and high scalability. Among all candi…
View article: Inline Bondwave Monitoring for Direct Bonding, Process Optimization and Impact on Post-Bond Distortion
Inline Bondwave Monitoring for Direct Bonding, Process Optimization and Impact on Post-Bond Distortion Open
Direct wafer bonding is essential in semiconductor manufacturing, with bondwave propagation dynamics influencing the overall bond quality. The main factor impacting bondwave velocity dynamics are substrate rigidity, fluid viscosity and adh…
View article: Y‐Stabilized ZrO<sub>2</sub> as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides
Y‐Stabilized ZrO<sub>2</sub> as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides Open
Y‐stabilized ZrO 2 (YSZ) as a promising single‐crystal wafer material for the epitaxial growth of transition metal dichalcogenides applicable for both physical (PVD) and chemical vapor deposition (CVD) processes is used. MoS 2 layers grown…
View article: Large‐Area Synthesis of Ferromagnetic Fe<sub>5−</sub><i><sub>x</sub></i>GeTe<sub>2</sub>/Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature
Large‐Area Synthesis of Ferromagnetic Fe<sub>5−</sub><i><sub>x</sub></i>GeTe<sub>2</sub>/Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature Open
Van der Waals (vdW) heterostructures combining layered ferromagnets and other 2D crystals are promising building blocks for the realization of ultracompact devices with integrated magnetic, electronic, and optical functionalities. Their im…
View article: Self-stabilization of the equilibrium state in ferroelectric thin films
Self-stabilization of the equilibrium state in ferroelectric thin films Open
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View article: Ferroelectric phase transitions in tensile-strained NaNbO3 epitaxial films probed by <i>in situ</i> x-ray diffraction
Ferroelectric phase transitions in tensile-strained NaNbO3 epitaxial films probed by <i>in situ</i> x-ray diffraction Open
In this study, in situ synchrotron x-ray diffraction was used to investigate a high-temperature phase transition in tensile-strained epitaxial NaNbO3/(110)DyScO3 films. A ferro-to-ferroelectric phase transition was found in the temperature…
View article: Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon Open
The integration of both optical and electronic components on a single chip, despite the challenge, holds the promise of compatibility with CMOS technology and high scalability. Among all candidate materials, III-V semiconductor nanostructu…
View article: Ultrafast element- and depth-resolved magnetization dynamics probed by transverse magneto-optical Kerr effect spectroscopy in the soft x-ray range
Ultrafast element- and depth-resolved magnetization dynamics probed by transverse magneto-optical Kerr effect spectroscopy in the soft x-ray range Open
We report on time- and angle-resolved transverse magneto-optical Kerr effect spectroscopy in the soft x-ray range that, by analysis via polarization-dependent magnetic scattering simulations, allows us to determine the spatio-temporal and …
View article: Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum
Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum Open
Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in …
View article: High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain
High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain Open
We have investigated high temperature phase transitions in NaNbO3 thin films epitaxially grown under tensile lattice strain on (110) DyScO3 substrates using metal-organic vapor phase epitaxy. At room temperature, a very regular stripe doma…
View article: Temperature dependence of three-dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films
Temperature dependence of three-dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films Open
The three-dimensional arrangement and orientation of domain walls in ferroelectric K0.9Na0.1NbO3/(110)NdScO3 epitaxial thin films were investigated at different temperatures both experimentally by means of piezoresponse force microscopy an…
View article: Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals
Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals Open
White-beam X-ray topography has been performed to provide direct evidence of micro-voids in dislocation-free high-purity germanium single crystals. The voids are visible because of a dynamical diffraction contrast. It is shown that voids o…