M. W. Denhoff
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Slow positron defect profiling of silicon epilayers Open
Over the last decade, positrons have been used as a probe to non- destructively study and depth profile defects in dilute concentrations (parts per million) in solids. Only recently have positrons been used to profile buried defects in ult…
Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs\n for focal plane array applications Open
The hole diffusion length in n-InGaAs is extracted for two samples of\ndifferent doping concentrations using a set of long and thin diffused junction\ndiodes separated by various distances on the order of the diffusion length. The\nmethodo…
Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications Open
The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodolog…