Mahbub Akhter
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View article: Light Extraction Improvement of Transfer Printable GaN LEDs on Si with Backside Roughening
Light Extraction Improvement of Transfer Printable GaN LEDs on Si with Backside Roughening Open
Transfer printing is an emerging technology that allows devices to be released from native substrates and placed onto new targets, which makes higher-level heterogeneous assembly/integration possible.
View article: High power surface emitting InGaN superluminescent light-emitting diodes
High power surface emitting InGaN superluminescent light-emitting diodes Open
A high power InGaN superluminescent light-emitting diode emitting normal to the substrate is demonstrated. The device uses a structure in which a monolithically integrated turning mirror reflects the light at both ends of the in-plane wave…
View article: Comparison between Different Optical Systems for Optogenetics based Head Mounted Device for Retina Pigmentosa
Comparison between Different Optical Systems for Optogenetics based Head Mounted Device for Retina Pigmentosa Open
Optogenetics is a fast growing neuromodulation techniques as it can remotely stimulate neural activities of a genetically modified cells. The advantage of remotely controlling the neural activity triggered researchers to implement a headse…
View article: InAlN-based LEDs emitting in the near-UV region
InAlN-based LEDs emitting in the near-UV region Open
Fully functional InAlN-based ultraviolet LEDs emitting at 340–350 nm were demonstrated for the first time; detailed electrical and optical characterization is presented and discussed. Results from the measurements at pulsed conditions are …
View article: High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes Open
Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a pa…