Maher Tahhan
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View article: Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN Open
This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen f…
View article: Suppression of Mg propagation into subsequent layers grown by MOCVD
Suppression of Mg propagation into subsequent layers grown by MOCVD Open
Low temperature (LT) flow modulation epitaxy (FME) or “pulsed” growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg…
View article: Modeling, Fabrication, and Analysis of Vertical Conduction Gallium Nitride Fin MOSFET
Modeling, Fabrication, and Analysis of Vertical Conduction Gallium Nitride Fin MOSFET Open
Gallium Nitride has seen much interest in the field of electronics due to its large bandgap and high mobility. In the field of power electronics, this combination leads to a low on-resistance for a given breakdown voltage. To take full adv…
View article: High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Open
This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical…
View article: Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Open
The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface r…