Manuel Belanche
YOU?
Author Swipe
View article: Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation
Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation Open
Deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) Schottky power diodes after heavy-ion microbeam irradiation…