Margit Zacharias
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View article: Sparked ZnO nanoparticles-based electrochemical sensor for onsite determination of glyphosate residues
Sparked ZnO nanoparticles-based electrochemical sensor for onsite determination of glyphosate residues Open
Glyphosate (N-(phosphonomethyl)glycine) is well known nonselective and broad-spectrum herbicide that has been extensively used in agricultural areas around the world to increase agricultural productivity. However, the utilization of glypho…
View article: Size Effect in SnO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Core/Shell Nanowires after Battery Cycling
Size Effect in SnO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Core/Shell Nanowires after Battery Cycling Open
Full utilization of the high storage capacity of conversion electrode materials as tin oxide (SnO 2 ) in lithium‐ion batteries is hindered by the high volumetric expansion due to the high lithium storability which can lead to major cell da…
View article: Hemopatch® is effective and safe to use: real-world data from a prospective European registry study
Hemopatch® is effective and safe to use: real-world data from a prospective European registry study Open
Surgical procedures are often impeded by bleeding and/or leakage of body fluids. These complications cannot always be resolved by conventional surgical techniques. Hemopatch ® is a hemostatic patch that also functions as a sealant. Here we…
View article: Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition
Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition Open
Highly textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C. X-ray diffraction analysis proves an epitaxial relationship…
View article: Low-power wavelength modulation in size-controlled Si nanocrystals using quantum confined Stark effect
Low-power wavelength modulation in size-controlled Si nanocrystals using quantum confined Stark effect Open
We report on the quantum confined Stark effect coupled with a permanent built-in electric dipole moment in size-controlled Si nanocrystals (SiNCs) investigated under steady state conditions by photoluminescence spectroscopy. The study was …
View article: Transition from freestanding SnO<sub>2</sub> nanowires to laterally aligned nanowires with a simulation-based experimental design
Transition from freestanding SnO<sub>2</sub> nanowires to laterally aligned nanowires with a simulation-based experimental design Open
In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a red…
View article: Photoelectrical reading in ZnO/Si NCs/<i>p</i>-Si resistive switching devices
Photoelectrical reading in ZnO/Si NCs/<i>p</i>-Si resistive switching devices Open
The increasing need for efficient memories with integrated functionalities in a single device has led the electronics community to investigate and develop different materials for resistive switching (RS) applications. Among these materials…
View article: Silicon nanocrystals-based electroluminescent resistive switching device
Silicon nanocrystals-based electroluminescent resistive switching device Open
In the last few years, the emergence of studies concerning the resistive switching (RS) phenomenon has resulted in the finding of a large amount of materials being capable of acting as an active layer in such devices, i.e., the layer where…
View article: Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect
Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect Open
Thin layers of silicon nanocrystals (SiNC) in oxide matrix with optimized parameters are fabricated by the plasma-enhanced chemical vapor deposition. These materials with SiNC sizes of about 4.5 nm and the SiO 2 barrier thickness of 3 nm r…
View article: Influence of Al2O3 Nanoparticle Addition on a UV Cured Polyacrylate for 3D Inkjet Printing
Influence of Al2O3 Nanoparticle Addition on a UV Cured Polyacrylate for 3D Inkjet Printing Open
The brittleness of acrylic photopolymers, frequently used in 3D Inkjet printing, limits their utilization in structural applications. In this study, a process was developed for the production and characterization of an alumina-enhanced nan…
View article: Electron Beam Effects on Oxide Thin Films—Structure and Electrical Property Correlations
Electron Beam Effects on Oxide Thin Films—Structure and Electrical Property Correlations Open
In situ transmission electron microscope (TEM) characterization techniques provide valuable information on structure–property correlations to understand the behavior of materials at the nanoscale. However, understanding nanoscale structure…
View article: Sphericity and roundness computation for particles using the extreme vertices model
Sphericity and roundness computation for particles using the extreme vertices model Open
Shape is a property studied for many kinds of particles. Among shape parameters, sphericity and roundness indices had been largely studied to understand several processes. Some of these indices are based on length measurements of the parti…
View article: Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride
Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride Open
Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH 4 and N 2 O are used as precursor gasses, which inevita…
View article: Interplay of bimolecular and Auger recombination in photoexcited carrier dynamics in silicon nanocrystal/silicon dioxide superlattices
Interplay of bimolecular and Auger recombination in photoexcited carrier dynamics in silicon nanocrystal/silicon dioxide superlattices Open
We report results of investigating carrier recombination in silicon nanocrystal/silicon dioxide superlattices. The superlattices prepared by nitrogen-free plasma enhanced chemical vapour deposition contained layers of silicon nanocrystals.…
View article: Changes of the absorption cross section of Si nanocrystals with temperature and distance
Changes of the absorption cross section of Si nanocrystals with temperature and distance Open
The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the an…
View article: Modulation of the electroluminescence emission from ZnO/Si NCs/<i>p</i>-Si light-emitting devices via pulsed excitation
Modulation of the electroluminescence emission from ZnO/Si NCs/<i>p</i>-Si light-emitting devices via pulsed excitation Open
In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute to t…
View article: Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide Open
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but al…
View article: Modulation Doping of Silicon using Aluminium-induced Acceptor States in\n Silicon Dioxide
Modulation Doping of Silicon using Aluminium-induced Acceptor States in\n Silicon Dioxide Open
All electronic, optoelectronic or photovoltaic applications of silicon depend\non controlling majority charge carriers via doping with impurity atoms.\nNanoscale silicon is omnipresent in fundamental research (quantum dots,\nnanowires) but…
View article: Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide Open
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but al…
View article: Comment on “Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling” [Appl. Phys. Lett. <b>108</b>, 223102 (2016)]
Comment on “Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling” [Appl. Phys. Lett. <b>108</b>, 223102 (2016)] Open
First Page
View article: Si nanocrystals and nanocrystal interfaces studied by positron annihilation
Si nanocrystals and nanocrystal interfaces studied by positron annihilation Open
Si nanocrystals embedded in a SiO2 matrix were studied with positron annihilation and photoluminescence spectroscopies. Analysis of the S- and W-parameters for the sample annealed at 800 °C reveals a positron trap at the interface between …
View article: Erratum to: Field-effect passivation on silicon nanowire solar cells
Erratum to: Field-effect passivation on silicon nanowire solar cells Open
Surface recombination represents a handicap for high-efficiency solar cells. Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-vol…