Mark Beeler
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View article: <i>Ab initio</i> and experimental studies of polarization and polarization related fields in nitrides and nitride structures
<i>Ab initio</i> and experimental studies of polarization and polarization related fields in nitrides and nitride structures Open
Spontaneous and piezoelectric polarization in the nitrides is analyzed. The slab model was designed and proved to be appropriate to obtain the spontaneous polarization in AlN, GaN and InN. The spontaneous polarization and polarization rela…
View article: Nonpolar<i>m</i>-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band
Nonpolar<i>m</i>-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band Open
Graphene monolayers can be used for atomically thin three-dimensional shell-shaped superscatterer designs. Due to the excitation of the first-order resonance of transverse magnetic (TM) graphene plasmons, the scattering cross section of th…
View article: Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band Open
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two con…
View article: Long-lived excitons in GaN/AlN nanowire heterostructures
Long-lived excitons in GaN/AlN nanowire heterostructures Open
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay\ntimes on the order of microseconds that persist up to room temperature. Doping\nthe GaN nanodisk insertions with Ge can reduce these PL decay times by two\norders …