Markus Gabrysch
YOU?
Author Swipe
View article: A Valleytronic Diamond Transistor: Electrostatic Control of Valley Currents and Charge-State Manipulation of NV Centers
A Valleytronic Diamond Transistor: Electrostatic Control of Valley Currents and Charge-State Manipulation of NV Centers Open
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices requires all-electric control of long…
View article: Carrier Scattering Mechanisms: Identification via the Scaling Properties of the Boltzmann Transport Equation
Carrier Scattering Mechanisms: Identification via the Scaling Properties of the Boltzmann Transport Equation Open
A method based on the scaling properties of the Boltzmann transport equation is proposed to identify the dominant scattering mechanisms that affect charge transport in a semiconductor. This method uses drift velocity data of mobile charges…
View article: Publisher's Note: “Investigation of transferred-electron oscillations in diamond” [Appl. Phys. Lett. <b>108</b>, 212104 (2016)]
Publisher's Note: “Investigation of transferred-electron oscillations in diamond” [Appl. Phys. Lett. <b>108</b>, 212104 (2016)] Open
First Page
View article: Investigation of transferred-electron oscillations in diamond
Investigation of transferred-electron oscillations in diamond Open
The recent discovery of Negative Differential Mobility (NDM) in intrinsic single-crystalline diamond enables the development of devices for high frequency applications. The Transferred-Electron Oscillator (TEO) is one example of such devic…
View article: An annealing study of charge collection efficiency on Float-Zone p-on-n ministrip sensors irradiated with 24 GeV/c protons and 20 MeV neutrons
An annealing study of charge collection efficiency on Float-Zone p-on-n ministrip sensors irradiated with 24 GeV/c protons and 20 MeV neutrons Open
Float-Zone n-bulk p-readout silicon sensors are currently operated in the tracking layers of many High Energy Physics experiments, where they are exposed to moderate to high fluences of hadrons. Though n-readout sensors, either with p or n…