Martin Hergt
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View article: Modelling of SiC and GaN transistors based on pulsed S-parameter measurements
Modelling of SiC and GaN transistors based on pulsed S-parameter measurements Open
For the design of fast-switching inverters a precise model of power semiconductors is required. Based on pulsed S-parameter measurements in the frequency range of 2 MHz to 500 MHz a SiC MOSFET and a GaN HEMT have been characterized. As bas…
View article: Modelling of SiC and GaN Transistors Based on Pulsed S-Parameter Measurements
Modelling of SiC and GaN Transistors Based on Pulsed S-Parameter Measurements Open
For the design of fast-switching inverters a precise model of power semiconductors is required. Based on pulsed S-parameter measurements in the frequency range of 2 MHz to 500 MHz a SiC MOSFET and a GaN HEMT have been characterized. As bas…