Masamitu Takahasi
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View article: Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning
Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning Open
We analyzed a number of complicated X-ray diffraction patterns using feature patterns obtained through unsupervised machine learning. A crystalline SiGe film on a Si substrate with a spatial fluctuation in both composition and crystal orie…
View article: In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN
In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN Open
In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also…
View article: In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures
In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures Open
We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) and of thickness 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synch…
View article: Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction Open
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to…
View article: Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using <i>in situ</i> X-ray diffraction
Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using <i>in situ</i> X-ray diffraction Open
Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during cappi…
View article: Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction
Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction Open
The evolution of polytypism during GaAs nanowire growth was investigated with in situ X-ray diffraction. The growth of nanowires was found to start with the formation of zincblende structure, followed by the growth of wurtzite structure. T…
View article: Spontaneous formation of suboxidic coordination around Co in ferromagnetic rutile Ti0.95Co0.05O2 film
Spontaneous formation of suboxidic coordination around Co in ferromagnetic rutile Ti0.95Co0.05O2 film Open
To evaluate local atomic structures around Co in high temperature diluted ferromagnetic semiconductor Co-doped TiO2, x-ray fluorescence holography and x-ray absorption fine structure experiments were carried out on rutile paramagnetic Ti0.…