Kei May Lau
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View article: <scp>HLA</scp>‐Typing of Donor‐Origin Cells Enriched From Urine Cell Culture of Kidney Transplanted Recipients
<span>HLA</span>‐Typing of Donor‐Origin Cells Enriched From Urine Cell Culture of Kidney Transplanted Recipients Open
The incomplete or lack of histocompatibility information constitutes a barrier for the early detection and management of de novo donor‐specific antibodies (DSA). To improve the quantity and quality of DNA materials for HLA typing, we devel…
View article: 755 nm InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> quantum dot laser with polarization-dependent emission from type-I and type-II band alignments
755 nm InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> quantum dot laser with polarization-dependent emission from type-I and type-II band alignments Open
InP/GaAs 0.65 P 0.35 quantum dot (QD) lasers with variable polarization are demonstrated through the tailoring of band alignment. Different band alignments of type-I and type-II are realized during QD growth with varied parameters. The ene…
View article: The Identification of 56 Novel <scp>HLA</scp> Alleles in Hong Kong Chinese Individuals in 2024
The Identification of 56 Novel <span>HLA</span> Alleles in Hong Kong Chinese Individuals in 2024 Open
We report here 56 novel HLA alleles identified in Hong Kong Chinese individuals. They have been submitted and officially named by the World Health Organization Nomenclature Committee for Factors of the HLA System in the year 2024.
View article: Waveguide grating couplers with bandwidth beyond 200 nm
Waveguide grating couplers with bandwidth beyond 200 nm Open
We propose and validate a new approach for wideband waveguide grating couplers (GC). The wideband operation is achieved using a slot waveguide grating structure above the conventional channel waveguide. With this slot waveguide grating str…
View article: Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator
Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator Open
Selective area heteroepitaxy provides an alternate solution for the monolithic integration of high-performance III-V lasers on Si with effective management of crystalline defects. Here, we report large-area single-crystal InP grown on (001…
View article: In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI (Laser Photonics Rev. 18(1)/2024)
In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI (Laser Photonics Rev. 18(1)/2024) Open
In-Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI In article number 2300549, Kei May Lau and colleagues present efficient and in-plane III–V distributed feedback (DFB) lasers selectively grown on (001) silicon-on-i…
View article: Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup>
Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> Open
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance…
View article: Monolithic integrated all-GaN-based µLED display by selective area regrowth
Monolithic integrated all-GaN-based µLED display by selective area regrowth Open
This work demonstrates an all-GaN-based µLED display with monolithic integrated HEMT and µLED pixels using the selective area regrowth method. The monochrome µLED-HEMT display has a resolution of 20 × 20 and a pixel pitch of 80 µm. With th…
View article: In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI
In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI Open
Hetero‐epitaxy for integration of efficient III‐V lasers on silicon can enable wafer‐scale silicon photonic integrated circuits, which can unleash the full advantages of silicon photonics in production on large silicon wafers with low cost…
View article: Monolithic active-matrix full-color micro-LED micro-display using InGaN/AlGaInP heterogeneous integration
Monolithic active-matrix full-color micro-LED micro-display using InGaN/AlGaInP heterogeneous integration Open
A prototype of active-matrix driven full-color micro-LED micro- display with a resolution of 200 × 80 is demonstrated using InGaN/AlGaInP heterogeneous integration. InGaN blue/green dual-color micro-LED arrays on a single MOCVD-grown GaN-o…
View article: 980 nm electrically pumped continuous lasing of QW lasers grown on silicon
980 nm electrically pumped continuous lasing of QW lasers grown on silicon Open
Investigation of high-performance lasers monolithically grown on silicon (Si) could promote the development of silicon photonics in regimes other than the 1.3 -1.5 µm band. 980 nm laser, a widely used pumping source for erbium-doped fiber …
View article: Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm
Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm Open
Excellent performance of InAs quantum dot (QD) lasers grown on Si in the datacom and telecom bands has been reported in recent years. InP QD lasers on Si with emission wavelength at 650 nm–750 nm are seldom explored. In this paper, we repo…
View article: High-speed and low dark current silicon-waveguide-coupled III-V photodetectors selectively grown on SOI
High-speed and low dark current silicon-waveguide-coupled III-V photodetectors selectively grown on SOI Open
Seamlessly integrating III-V active devices with Si passive components in a monolithic manner is the key for fully integrated Si photonics. In this article, we demonstrate high-performance III-V photodetectors directly grown on industry-st…
View article: Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs
Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs Open
A full-color micro-display via bonding of a InGaN blue/green dual-wavelength light-emitting diode (LED) array and a AlGaInP red LED array is demonstrated. The micro-display has a 120 µm pixel pitch, and each pixel consists of 40 µm × 120 µ…
View article: Gain-switching of 1.55 <i>µ</i>m InP-based Qdash lasers grown on Si
Gain-switching of 1.55 <i>µ</i>m InP-based Qdash lasers grown on Si Open
Reliable lasers on Si with large bandwidth are desirable for high-performance data communication systems on Si-photonics platforms. Here, we report short optical pulses generated by gain-switched InP-based 1.55 µm quantum dash (Qdash) lase…
View article: Dynamic Characteristics of GaN MISHEMT With 5-nm <i>In-Situ</i> SiN<sub>x</sub> Dielectric Layer
Dynamic Characteristics of GaN MISHEMT With 5-nm <i>In-Situ</i> SiN<sub>x</sub> Dielectric Layer Open
A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature thresho…
View article: High-performance III-V photodetectors on a monolithic InP/SOI platform
High-performance III-V photodetectors on a monolithic InP/SOI platform Open
Integrating light emission and detection functionalities using efficient III-V materials on Si wafers is highly desirable for Si-based photonic integrated circuits. To fulfill the need of high-performance photodetectors (PDs) monolithicall…
View article: Controlled single-mode emission in quantum dot micro-lasers
Controlled single-mode emission in quantum dot micro-lasers Open
In this paper, we demonstrate an efficient and easy fabrication method for whispering-gallery-mode (WGM) manipulation and report the first electrically driven single-mode quantum dot micro-ring (QDMR) lasers. Using self-assembled InAs/InAl…
View article: Optical gain and absorption of 1.55 <i>μ</i>m InAs quantum dash lasers on silicon substrate
Optical gain and absorption of 1.55 <i>μ</i>m InAs quantum dash lasers on silicon substrate Open
This Letter reports on the temperature-dependent optical gain and absorption features, including the quantum confined Stark effect, of an InAs/InGaAs quantum-dash laser directly grown on a (001) Si substrate, with the lasing wavelength wit…
View article: 848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production
848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production Open
In this paper, fabrication processes of a 0.55-inch 400 × 240 high-brightness active-matrix micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The micro-LED array, featuring a pixel size of 20 µm × 20 µm and…
View article: GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates
GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates Open
We report GaSb-based laser diodes (LDs) grown on on-axis (001) Si substrates and emitting at 2.3 µm. Two series of LDs were studied and compared. For the first series, a GaAs-based buffer layer was first grown by metal organic chemical vap…
View article: Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform Open
In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV) light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same p-GaN/AlGaN/GaN epi-structures grown on Si. Due to th…
View article: III–V lasers selectively grown on (001) silicon
III–V lasers selectively grown on (001) silicon Open
Epitaxial growth of III–V lasers on the (001) Si platform is emerging as the ultimate integration strategy for low-cost, energy-efficient, and wafer-scale photonic integrated circuits. As the performance of laser diodes grown on III–V/Si c…
View article: InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition
InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition Open
An investigation of self-assembled polar InGaN quantum dots (QDs) on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) is reported. The radiative exciton lifetime is measured by time-resolved photoluminescence …
View article: Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers
Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers Open
Compared to quantum well (QW) lasers, lower dimensional quantum dot (QD) or quantum dash (QDash) devices demonstrate superior performances, owing to their quantized energy levels and increased carrier confinement. Here, we report the syste…
View article: 1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon
1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon Open
Realization of fully integrated silicon photonics has been handicapped by the lack of a reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous wave (CW) lasing and operation sustainable at high temper…
View article: Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si Open
Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown…
View article: Bufferless 1.5 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms
Bufferless 1.5 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms Open
Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on-insulator (SOI) platform could seamlessly bridge the…