Merritt P. Losert
YOU?
Author Swipe
View article: Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex
Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex Open
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically size…
View article: Valley Splitting Correlations Across a Silicon Quantum Well
Valley Splitting Correlations Across a Silicon Quantum Well Open
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state t…
View article: g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects
g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects Open
Understanding the $g$-factor physics of Si/SiGe quantum dots is crucial for realizing high-quality spin qubits. While previous work has explained some aspects of $g$-factor physics in idealized geometries, the results do not extend to gene…
View article: Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells Open
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter …
View article: Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling Open
We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to model the nonadiabatic dynamics in regions of small valley …
View article: Strategies for Enhancing Spin-Shuttling Fidelities in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Si</mml:mi></mml:math>/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Si</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ge</mml:mi></mml:math> Quantum Wells with Random-Alloy Disorder
Strategies for Enhancing Spin-Shuttling Fidelities in / Quantum Wells with Random-Alloy Disorder Open
Coherent coupling between distant qubits is needed for many scalable quantum computing schemes. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving dot potentia…
View article: Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells
Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells Open
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profi…
View article: Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells Open
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profile…
View article: Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder Open
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Her…
View article: Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Reducing strain fluctuations in quantum dot devices by gate-layer stacking Open
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device fu…
View article: Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells
Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells Open
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challe…
View article: Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells Open
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challe…
View article: SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits Open
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the v…
View article: Source data for the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits"
Source data for the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits" Open
<p>This repository contains data reported in the figures of the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits."</p>
View article: Source data for the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits"
Source data for the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits" Open
This repository contains data reported in the figures of the publication "SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits."
View article: Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots Open
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministica…
View article: How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces
How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces Open
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-e…
View article: Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots Open
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministica…
View article: SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits Open
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the v…
View article: Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells
Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells Open
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by pe…