Michael A. Fogarty
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View article: High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots
High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots Open
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity…
View article: Towards Early Fault Tolerance on a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mi>N</mml:mi></mml:math> Array of Qubits Equipped with Shuttling
Towards Early Fault Tolerance on a Array of Qubits Equipped with Shuttling Open
It is well understood that a two-dimensional grid of locally interacting qubits is a promising platform for achieving fault-tolerant quantum computing. However in the near future, it may prove less challenging to develop lower-dimensional …
View article: Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process
Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process Open
Advanced semiconductor manufacturing offers a promising path to scaling up silicon-based quantum processors by improving yield, uniformity, and integration. Individual spin qubit control and readout have been demonstrated in quantum dots f…
View article: Towards early fault tolerance on a 2$\times$N array of qubits equipped with shuttling
Towards early fault tolerance on a 2$\times$N array of qubits equipped with shuttling Open
It is well understood that a two-dimensional grid of locally-interacting qubits is a promising platform for achieving fault tolerant quantum computing. However in the near-future, it may prove less challenging to develop lower dimensional …
View article: Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box
Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box Open
Three key metrics for readout systems in quantum processors are measurement\nspeed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit\nmeasurements, a necessary feature for many dynamic algorithms and quantum error\nco…
View article: Silicon edge-dot architecture for quantum computing with global control and integrated trimming
Silicon edge-dot architecture for quantum computing with global control and integrated trimming Open
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expre…
View article: Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire Open
We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal–oxide–semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon c…
View article: Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays
Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays Open
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire nat…
View article: A Silicon Surface Code Architecture Resilient Against Leakage Errors
A Silicon Surface Code Architecture Resilient Against Leakage Errors Open
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qub…
View article: Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction
Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction Open
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction that de…
View article: Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout
Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout Open
View article: Impact of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math>-factors and valleys on spin qubits in a silicon double quantum dot
Impact of -factors and valleys on spin qubits in a silicon double quantum dot Open
We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is c…
View article: Nonexponential fidelity decay in randomized benchmarking with low-frequency noise
Nonexponential fidelity decay in randomized benchmarking with low-frequency noise Open
We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysi…