Michael Clavel
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View article: Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium
Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium Open
As forward-looking electron devices increasingly adopt high-mobility low-band-gap materials, such as germanium (Ge), questions remain regarding the feasibility of strain engineering in low-band-gap systems. Particularly, the Ge L-Γ valley …
View article: Room-temperature intrinsic and extrinsic damping in polycrystalline Fe thin films
Room-temperature intrinsic and extrinsic damping in polycrystalline Fe thin films Open
We examine room-temperature magnetic relaxation in polycrystalline Fe films.\nOut-of-plane ferromagnetic resonance (FMR) measurements reveal Gilbert damping\nparameters of $\\approx$ 0.0024 for Fe films with thicknesses of 4-25 nm,\nregard…
View article: Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In<sub><i>x</i></sub>Al<sub>1–<i>x</i></sub>As Stressors
Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In<sub><i>x</i></sub>Al<sub>1–<i>x</i></sub>As Stressors Open
The indirect nature of silicon (Si) emission currently limits the monolithic integration of photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of Si include band structure engineering via alloying (e.…
View article: Atomic layer deposited tantalum silicate on crystallographically-oriented epitaxial germanium: interface chemistry and band alignment
Atomic layer deposited tantalum silicate on crystallographically-oriented epitaxial germanium: interface chemistry and band alignment Open
Schematic representation of TaSiO x on crystallographically-oriented Ge and its empirical impact on the TaSiO x /Ge interfacial energy band discontinuity.
View article: Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure
Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure Open
Strain and band gap engineered epitaxial germanium (ϵ-Ge) quantum-well (QW) laser structures were investigated on GaAs substrates theoretically and experimentally for the first time. In this design, we exploit the ability of an InGaAs laye…
View article: Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability
Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability Open
The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and…
View article: Intrinsic and Extrinsic Damping in Polycrystalline Fe Thin Films
Intrinsic and Extrinsic Damping in Polycrystalline Fe Thin Films Open
We examine magnetic relaxation in polycrystalline Fe films with strong and weak crystallographic texture. Out-of-plane ferromagnetic resonance (FMR) measurements reveal Gilbert damping parameters of $\approx$ 0.0024 for Fe films with thick…
View article: Tri-gate GaN junction HEMT
Tri-gate GaN junction HEMT Open
This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-ga…
View article: Magnetic Damping in Epitaxial Fe Alloyed with Low-Atomic-Number Elements
Magnetic Damping in Epitaxial Fe Alloyed with Low-Atomic-Number Elements Open
To develop low-moment, low-damping metallic ferromagnets for power-efficient spintronic devices, it is crucial to understand how magnetic relaxation is impacted by the addition of nonmagnetic elements. Here, we compare magnetic relaxation …
View article: Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure
Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure Open
(a) Cross-sectional TEM micrograph of 14 period InAs/GaSb SL, demonstrating abrupt interfaces; and (b) Shubnikov-de Haas oscillations testifying high mobility.
View article: TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications Open
A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient…
View article: In Situ SiO<sub>2</sub> Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO<sub><i>x</i></sub> Atomic Layer Deposition Process
In Situ SiO<sub>2</sub> Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO<sub><i>x</i></sub> Atomic Layer Deposition Process Open
In this work, an in situ SiO2 passivation technique using atomic layer deposition (ALD) during the growth of gate dielectric TaSiO x on solid-source molecular beam epitaxy grown (100)In x Ga1-x As and (110)In x Ga1-x As on InP substrates i…
View article: Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials
Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials Open
The impact of bulk and surface defect states on the vibrational and optical properties of step-graded epitaxial GaAs1-ySby (0 ≤ y ≤ 1) materials with and without chemical surface treatment by (NH4)2S was investigated. Tunable antimony (Sb)…
View article: Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer
Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer Open
An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer. X-ray analysis demonstrated near complete strain relaxati…
View article: Growth, structural, and electrical properties of germanium-<i>on</i>-silicon heterostructure by molecular beam epitaxy
Growth, structural, and electrical properties of germanium-<i>on</i>-silicon heterostructure by molecular beam epitaxy Open
The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ∼0.10% tensile-strained G…
View article: Heterogeneously grown tunable group-IV laser on silicon
Heterogeneously grown tunable group-IV laser on silicon Open
Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers wi…
View article: Enhanced Erbium-Doped Ceria Nanostructure Coating to Improve Solar Cell Performance
Enhanced Erbium-Doped Ceria Nanostructure Coating to Improve Solar Cell Performance Open
This paper discusses the effect of adding reduced erbium-doped ceria nanoparticles (REDC NPs) as a coating on silicon solar cells. Reduced ceria nanoparticles doped with erbium have the advantages of both improving conductivity and optical…
View article: Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer Open
Structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconduct…
View article: Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications Open
We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO 3 -xBa(Cu 1/3 Nb 2/3 )O 3 (x = 0.025) (BT-BCN) integrated on to HfO 2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray dif…
View article: Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors
Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors Open
The structural, morphological, and energy band alignment properties of biaxial tensile-strained germanium epilayers, grown in-situ on GaAs via a linearly graded InxGa1-xAs buffer architecture and utilizing dual chamber molecular beam epita…