Michaël Rosticher
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View article: Quantum transport signature of strain-induced scalar and pseudovector potentials in a crenelated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>h</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>BN</mml:mi></mml:math>/graphene heterostructure
Quantum transport signature of strain-induced scalar and pseudovector potentials in a crenelated -/graphene heterostructure Open
International audience
View article: Operando investigation of nanocrystal-based device energy landscape: Seeing the current pathway
Operando investigation of nanocrystal-based device energy landscape: Seeing the current pathway Open
International audience
View article: Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure Open
The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given ris…
View article: High-Sensitivity ac-Charge Detection with a MHz-Frequency Fluxonium Qubit
High-Sensitivity ac-Charge Detection with a MHz-Frequency Fluxonium Qubit Open
Owing to their strong dipole moment and long coherence times, superconducting qubits have demonstrated remarkable success in hybrid quantum circuits. However, most qubit architectures are limited to the GHz frequency range, severely constr…
View article: The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions
The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions Open
$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By qua…
View article: Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons Open
Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lig…
View article: Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide
Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide Open
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is co…
View article: One Hundred Second Bit-Flip Time in a Two-Photon Dissipative Oscillator
One Hundred Second Bit-Flip Time in a Two-Photon Dissipative Oscillator Open
Current implementations of quantum bits (qubits) continue to undergo too many\nerrors to be scaled into useful quantum machines. An emerging strategy is to\nencode quantum information in the two meta-stable pointer states of an\noscillator…
View article: Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide
Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide Open
Data from the article "Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide" Appl. Phys. Lett. 122, 264001 (2023) - (arXiv:2304.00130 (2023))
View article: Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide
Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide Open
Data from the article "Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide" Appl. Phys. Lett. 122, 264001 (2023) - (arXiv:2304.00130 (2023))
View article: Electroluminescence of the graphene 2D semi-metal
Electroluminescence of the graphene 2D semi-metal Open
Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating …
View article: Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide Open
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is co…
View article: Mesoscopic Klein-Schwinger effect in graphene
Mesoscopic Klein-Schwinger effect in graphene Open
Strong electric field annihilation by particle–antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electr…
View article: Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators
Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators Open
High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plas…
View article: Experimental data of "High-field 1/f noise in hBN-encapsulated graphene transistors"
Experimental data of "High-field 1/f noise in hBN-encapsulated graphene transistors" Open
Current-to-voltage characteristics along with flicker noise amplitude (A factor, description given in the paper) of the devices studied in the main and supplementary text of the article " by A. Schmitt et al. Dimensions of devices are prov…
View article: Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy
Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy Open
As the field of nanocrystal-based optoelectronics matures, more advanced techniques must be developed in order to reveal the electronic structure of nanocrystals, particularly with device-relevant conditions. So far, most of the efforts ha…
View article: Experimental data of "Mesoscopic Klein-Schwinger effect in graphene"
Experimental data of "Mesoscopic Klein-Schwinger effect in graphene" Open
Current-to-voltage characteristics of the devices studied in the main and supplementary text of the article "Mesoscopic Klein-Schwinger effect in graphene" by A. Schmitt et al. Dimensions of devices are provided in the article
View article: Experimental data of "Mesoscopic Klein-Schwinger effect in graphene"
Experimental data of "Mesoscopic Klein-Schwinger effect in graphene" Open
Current-to-voltage characteristics of the devices studied in the main and supplementary text of the article "Mesoscopic Klein-Schwinger effect in graphene" by A. Schmitt et al. Dimensions of devices are provided in the article
View article: Mesoscopic Klein-Schwinger effect in graphene
Mesoscopic Klein-Schwinger effect in graphene Open
Strong electric field annihilation by particle-antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electr…
View article: HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection
HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection Open
International audience
View article: Large terahertz electric dipole of a single graphene quantum dot
Large terahertz electric dipole of a single graphene quantum dot Open
International audience
View article: Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride Open
In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the …
View article: Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride Open
Dataset corresponding to all figures of the main text. Nature Communications 12, 3779 (2021) – DOI : 10.1038/s41467-021-24019-6 Preprint at https://arxiv.org/abs/2011.12224
View article: Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride Open
Dataset corresponding to all figures of the main text. Nature Communications 12, 3779 (2021) – DOI : 10.1038/s41467-021-24019-6 Preprint at https://arxiv.org/abs/2011.12224
View article: Correlating Structure and Detection Properties in HgTe Nanocrystal Films
Correlating Structure and Detection Properties in HgTe Nanocrystal Films Open
HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates t…
View article: Optoelectronic Mixing in High-Mobility Graphene
Optoelectronic Mixing in High-Mobility Graphene Open
High-mobility hexagonal boron nitride (hBN)/graphene/hBN heterostructures are able to reach intrinsic limits of transport. Here, we investigate optoelectronic mixing, which is a demanding function combining efficient photodetection and fas…
View article: Edge mode engineering for optimal ultracoherent silicon nitride membranes
Edge mode engineering for optimal ultracoherent silicon nitride membranes Open
Due to their high force sensitivity, mechanical resonators combining low mechanical dissipation with a small motional mass are highly demanded in fields as diverse as resonant force microscopy, mass sensing, or cavity optomechanics. “Soft-…
View article: Edge mode engineering for optimal ultracoherent SiN membrane designs
Edge mode engineering for optimal ultracoherent SiN membrane designs Open
Raw dataset for all the figures of the article entitled 'Edge mode engineering for optimal ultracoherent SiN membrane designs', and corresponding scripts for data analysis.
View article: Edge mode engineering for optimal ultracoherent SiN membrane designs
Edge mode engineering for optimal ultracoherent SiN membrane designs Open
Raw dataset for all the figures of the article entitled 'Edge mode engineering for optimal ultracoherent SiN membrane designs', and corresponding scripts for data analysis.