Michael Seas
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View article: Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique Open
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III–V semiconductor/Al structures are grown by molecular beam epitaxy on III–V s…
View article: Machine-learning-assisted fabrication: Bayesian optimization of laser-induced graphene patterning using in-situ Raman analysis
Machine-learning-assisted fabrication: Bayesian optimization of laser-induced graphene patterning using in-situ Raman analysis Open
The control of the physical, chemical, and electronic properties of laser-induced graphene (LIG) is crucial in the fabrication of flexible electronic devices. However, the optimization of LIG production is time-consuming and costly. Here, …
View article: Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding\n technique
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding\n technique Open
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality\nGaAs and pristine interfaces have been fabricated using a wafer-bonding\ntechnique. III-V semiconductor/Al structures are grown by molecular beam\nepitaxy on III-…
View article: Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces Open
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superc…