Michał Jarosik
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View article: Experimental Characterization of a Silicon Nitride Asymmetric Loop-Terminated Mach-Zehnder Interferometer with a Refractive Index-Engineered Sensing Arm
Experimental Characterization of a Silicon Nitride Asymmetric Loop-Terminated Mach-Zehnder Interferometer with a Refractive Index-Engineered Sensing Arm Open
We report the design, fabrication, and experimental characterization of an asymmetric loop-terminated Mach–Zehnder interferometer (a-LT-MZI) realized on a silicon nitride (SiN) platform for refractive index (RI) sensing. The LT-MZI archite…
View article: Analysis of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor devices
Analysis of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor devices Open
In this paper, we present the study of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor structures. We fabricated the Al/SiOx/a-Si/SiOx/n++ Si devices using low-temperature processes with various o…
View article: Resonant cavity structure based on Silicon Nitride platform for refractive index sensing applications
Resonant cavity structure based on Silicon Nitride platform for refractive index sensing applications Open
We report the design, fabrication, and experimental demonstration of a high-sensitivity refractive index (RI) sensor based on a silicon nitride (SixNy) resonant cavity structure. The device employs a loop-shaped resonator coupled to a bus …